BZA109TS datasheet(3/12 Pages) PHILIPS

3 / 12 page

1997 Sep 08

Philips Semiconductors

Preliminary speciﬁcation

9-fold ESD Transient Suppressor

BZA109TS

LIMITING VALUES (per diode)

In accordance with the Absolute Maximum Rating System (IEC 134).

THERMAL CHARACTERISTICS

Note to the Limiting values and Thermal characteristics

1. Current is flowing from input to corresponding output.

2. One or more diodes loaded.

ELECTRICAL CHARACTERISTICS (per diode)

Tj =25 °C unless otherwise speciﬁed.

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

reverse current

DC; Tamb =25 °C

−

forward current

DC; Tamb =25 °C

−

100

IFT

feed-through current

DC; Tamb =25 °C; note 1

−

100

IFSM

peak forward current

tp = 1 ms; square wave

−

4.5

IZSM

peak reverse current

tp = 1 ms; square wave

2.5

Ptot

total power dissipation

Tamb =25 °C; note 2

−

0.95

Tstg

storage temperature

−65

+150

°C

junction temperature

−65

+150

°C

SYMBOL

PARAMETER

VALUE

UNIT

Rth j-a

thermal resistance from junction to ambient; note 2

135

K/W

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

reverse voltage

IZ = 250 µA

6.4

6.8

7.2

forward voltage

IF = 100 mA

−−

1.1

VZSM

reverse surge voltage

tp = 1 ms; IZSM = 2.5 A

−−

input high current

VIN = 5.25 V

−−

0.5

µA

zener impedance

IZ = 250 µA

−−

100

Ω

temperature coefﬁcient of VZ

−

mV/K

input diode capacitance

f = 1 MHz; VR =0

−−

200

f = 1 MHz; VR = 5.25 V

−−

100

BZA109TS bảng dữ liệu(PDF) 3 Page - NXP Semiconductors

BZA109TS bảng dữ liệu(HTML) 3 Page - NXP Semiconductors

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12

bảng dữ liệu tải về

Link URL