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BYW56 bảng dữ liệu(PDF) 2 Page - NXP Semiconductors

tên linh kiện BYW56
Giải thích chi tiết về linh kiện  Controlled avalanche rectifiers
PDF  7 Pages
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nhà sản xuất  PHILIPS [NXP Semiconductors]
Trang chủ  http://www.nxp.com
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BYW56 bảng dữ liệu(HTML) 2 Page - NXP Semiconductors

  BYW56 Datasheet HTML 1Page - NXP Semiconductors BYW56 Datasheet HTML 2Page - NXP Semiconductors BYW56 Datasheet HTML 3Page - NXP Semiconductors BYW56 Datasheet HTML 4Page - NXP Semiconductors BYW56 Datasheet HTML 5Page - NXP Semiconductors BYW56 Datasheet HTML 6Page - NXP Semiconductors BYW56 Datasheet HTML 7Page - NXP Semiconductors  
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1996 Oct 03
2
Philips Semiconductors
Product specification
Controlled avalanche rectifiers
BYW54 to BYW56
FEATURES
• Glass passivated
• High maximum operating
temperature
• Low leakage current
• Excellent stability
• Guaranteed avalanche energy
absorption capability
• Available in ammo-pack.
DESCRIPTION
Rugged glass package, using a high
temperature alloyed construction.
This package is hermetically sealed
and fatigue free as coefficients of
expansion of all used parts are
matched.
2/3 page (Datasheet)
MAM047
ka



Fig.1 Simplified outline (SOD57) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VRRM
repetitive peak reverse voltage
BYW54
−
600
V
BYW55
−
800
V
BYW56
−
1000
V
VRWM
crest working reverse voltage
BYW54
−
600
V
BYW55
−
800
V
BYW56
−
1000
V
VR
continuous reverse voltage
BYW54
−
600
V
BYW55
−
800
V
BYW56
−
1000
V
IF(AV)
average forward current
Ttp =45 °C;
lead length = 10 mm;
averaged over any 20 ms
period; see Figs 2 and 4
−
2.0
A
Tamb =80 °C; PCB mounting
(see Fig.9);
averaged over any 20 ms
period; see Figs 3 and 4
−
0.8
A
IFSM
non-repetitive peak forward current
t = 10 ms half sinewave
−
50
A
ERSM
non-repetitive peak reverse avalanche
energy
L = 120 mH; Tj =Tj max prior to
surge; inductive load switched off
−
20
mJ
Tstg
storage temperature
−65
+175
°C
Tj
junction temperature
see Fig.5
−65
+175
°C



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