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BYW29EB bảng dữ liệu(PDF) 1 Page - NXP Semiconductors |
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BYW29EB bảng dữ liệu(HTML) 1 Page - NXP Semiconductors |
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1 / 8 page ![]() Philips Semiconductors Product specification Rectifier diodes BYW29EB, BYW29ED series ultrafast, rugged FEATURES SYMBOL QUICK REFERENCE DATA • Low forward volt drop V R = 150 V/ 200 V • Fast switching • Soft recovery characteristic V F ≤ 0.895 V • Reverse surge capability • High thermal cycling performance I F(AV) = 8 A • Low thermal resistance I RRM = 0.2 A t rr ≤ 25 ns GENERAL DESCRIPTION Ultra-fast, epitaxial rectifier diodes intended for use as output rectifiers in high frequency switched mode power supplies. The BYW29EB series is supplied in the SOT404 surface mounting package. The BYW29ED series is supplied in the SOT428 surface mounting package. PINNING SOT404 SOT428 PIN DESCRIPTION 1 no connection 2 cathode 1 3 anode tab cathode LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT BYW29EB/ BYW29ED -150 -200 V RRM Peak repetitive reverse - 150 200 V voltage V RWM Working peak reverse - 150 200 V voltage V R Continuous reverse voltage - 150 200 V I F(AV) Average rectified forward square wave; δ = 0.5; T mb ≤ 128 ˚C - 8 A current I FRM Repetitive peak forward square wave; δ = 0.5; T mb ≤ 128 ˚C - 16 A current I FSM Non-repetitive peak forward t = 10 ms - 80 A current t = 8.3 ms - 88 A sinusoidal; with reapplied V RRM(max) I RRM Peak repetitive reverse t p = 2 µs; δ = 0.001 - 0.2 A surge current I RSM Peak non-repetitive reverse t p = 100 µs - 0.2 A surge current T j Operating junction - 150 ˚C temperature T stg Storage temperature - 40 150 ˚C 1. It is not possible to make connection to pin 2 of the SOT428 or SOT404 packages. k a tab 3 1 2 3 tab 13 tab 2 November 1998 1 Rev 1.300 |
Số phần tương tự - BYW29EB |
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Mô tả tương tự - BYW29EB |
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