CS101 Series

5

■ RECOMMENDED OPERATING CONDITIONS

• Single power supply (VDD = 1.2 V ± 0.1 V)

(VSS

= 0 V)

• Dual power supply (VDDE = 2.5 V ± 0.2 V, VDDI = 1.2 V ± 0.1 V)

(VSS

= 0 V)

• Dual power supply (VDDE = 3.3 V ± 0.3 V, VDDI = 1.2 V ± 0.1 V)

(VSS

= 0 V)

WARNING: The recommended operating conditions are required in order to ensure the normal operation of the

semiconductor device. All of the device’s electrical characteristics are warranted when the device is

operated within these ranges.

Always use semiconductor devices within their recommended operating condition ranges. Operation

outside these ranges may adversely affect reliability and could result in device failure.

No warranty is made with respect to uses, operating conditions, or combinations not represented on

the data sheet. Users considering application outside the listed conditions are advised to contact their

FUJITSU representatives beforehand.

Parameter

Symbol

Value

Unit

Min

Typ

Max

Power supply voltage

VDD

1.1

1.2

1.3

V

H level input voltage

VIH

VDD

× 0.7

⎯

VDD

+ 0.3

V

L level input voltage

VIL

− 0.3

⎯

VDD

× 0.3

V

Operation junction

temperature

Tj

− 40

⎯+ 125

°C

Parameter

Symbol

Value

Unit

Min

Typ

Max

Power supply voltage

2.5 V

VDDE

2.3

2.5

2.7

V

1.2 V

VDDI

1.1

1.2

1.3

V

H level input voltage

2.5 V CMOS level

VIH

1.7

⎯

VDDE

+ 0.3

V

1.2 V CMOS level

VDDI

× 0.7

⎯

VDDI

+ 0.3

V

L level input voltage

2.5 V CMOS level

VIL

− 0.3

⎯

+ 0.7

V

1.2 V CMOS level

− 0.3

⎯

VDDI

× 0.3

V

Operation junction temperature

Tj

− 40

⎯+ 125

°C

Parameter

Symbol

Value

Unit

Min

Typ

Max

Power supply voltage

3.3 V

VDDE

3.0

3.3

3.6

V

1.2 V

VDDI

1.1

1.2

1.3

V

H level input voltage

3.3 V CMOS level

VIH

2.0

⎯

VDDE

+ 0.3

V

1.2 V CMOS level

VDDI

× 0.7

⎯

VDDI

+ 0.3

V

L level input voltage

3.3 V CMOS level

VIL

− 0.3

⎯

+ 0.8

V

1.2 V CMOS level

− 0.3

⎯

VDDI

× 0.3

V

Operation junction temperature

Tj

− 40

⎯+ 125

°C