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INA849 bảng dữ liệu(PDF) 9 Page - Texas Instruments

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tên linh kiện INA849
Giải thích chi tiết về linh kiện  PGA855 Low-Noise, Wide-Bandwidth, Fully Differential Output Programmable-Gain Instrumentation Amplifier
PDF  42 Pages
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Trang chủ  http://www.ti.com
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INA849 bảng dữ liệu(HTML) 9 Page - Texas Instruments

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7.6 Typical Characteristics
at TA = 25°C, VS = VSOUT = ±15 V, VICM = VOCM = 0 V, RL = 10 kΩ, and G = 1 V/V (unless otherwise noted)
Table 7-1. Table of Graphs (continued)
DESCRIPTION
FIGURE
Small-Signal Step Response, G = 0.125 V/V
Figure 7-44
Large-Signal Step Response
Figure 7-45
Gain Switching Transient Response
Figure 7-46
Output Short-Circuit Current vs Temperature
Figure 7-47
Positive Output Voltage Swing vs Output Current
Figure 7-48
Negative Output Voltage Swing vs Output Current
Figure 7-49
Overload Recovery
Figure 7-50
Closed-Loop Output Impedance vs Frequency
Figure 7-51
Overshoot vs Capacitive Load
Figure 7-52
Quiescent Current vs Temperature
Figure 7-53
THD + Noise vs Frequency (22-kHz Filter)
Figure 7-54
THD + Noise vs Frequency (500-kHz Filter)
Figure 7-55
2nd Harmonic Distortion vs Frequency
Figure 7-56
3rd Harmonic Distortion vs Frequency
Figure 7-57
Total Harmonic Distortion vs Frequency vs Output Load
Figure 7-58
Ax Digital Input Pin Current vs Ax Digital Input Pin Voltage
Figure 7-59
DGND Digital Input Pin Current vs A2 Digital Input Pin Voltage
Figure 7-60
Digital Input Pin Current vs Temperature
Figure 7-61
Input Referred Offset Voltage ( V)
0
10
20
30
-400
-300
-200
-100
0
100
200
300
400
N = 2500
Mean = –21.25 µV
Std. dev. = 36.79 µV
G = 16 V/V
Figure 7-1. Distribution of Offset Voltage (RTI)
Offset Voltage Drift ( V/ C)
0
10
20
30
-1
-0.8
-0.6
-0.4
-0.2
0
0.2
0.4
0.6
0.8
1
N = 53
Mean = –0.11 µV/°C
Std. dev. = 0.08 µV/°C
G = 16 V/V
Figure 7-2. Distribution of Offset Voltage Drift (RTI)
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PGA855
SBOSAE0B – APRIL 2023 – REVISED SEPTEMBER 2023
Copyright © 2023 Texas Instruments Incorporated
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Product Folder Links: PGA855



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