T1235H_06 datasheet(4/8 Pages) STMICROELECTRONICS

4 / 8 page

T1235H

4/8

Figure 7: Non-repetitive surge peak on-state

current for a sinusoidal pulse with width tp < 10 ms

and corresponding value of I2t

Figure 8: Relative variation of gate trigger

current, holding current and latching current

versus junction temperature (typical values)

Figure 9: Relative variation of critical rate of

decrease of main current versus (dV/dt)c

(typical values)

Figure 10: Relative variation of critical rate of

decrease of main current versus junction

temperature

Figure 11: Leakage current versus junction

temperature for different values of blocking

voltage (typical values)

Figure 12: Acceptable repetitive peak off-state

voltage versus case-ambient thermal resistance

0.01

0.10

1.00

10.00

100

1000

2000

(A), I t (A s)

TSM

t (ms)

T initial=25°C

dI/dt limitation:

50A/µs

ITSM

I t

-40

-20

100

120

140

160

0.0

0.5

1.0

1.5

2.0

2.5

T (°C)

I,I ,I [T ] /

GT H L

,I ,I [T =25°C]

GT H L

IGT

IH & IL

0.1

1.0

10.0

100.0

0.0

1.0

2.0

3.0

4.0

5.0

6.0

(dV/dt)c (V/µs)

(dI/dt)c [(dV/dt)c] / Specified (dI/dt)c

100

125

150

(dI/dt)c [T ] /

]

(dI/dt)c [T = 150°C

T (°C)

100

125

150

1E-3

1E-2

1E-1

1E+0

1E+1

I/ I(mA)

DRM

RRM

T (°C)

V = V = 200V

V = V = 400V

V = V = 600V

100

200

300

400

500

600

700

V/ V(V)

DRM

RRM

(°C/W)

th(c-a)

T = 150°C

= 1.2°C/W

th(j-c)

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