BYQ30EB datasheet(4/8 Pages) PHILIPS

tên linh kiện	BYQ30EB

Giải thích chi tiết về linh kiện	Rectifier diodes ultrafast, rugged

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nhà sản xuất	PHILIPS [NXP Semiconductors]

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Philips Semiconductors

Product specification

Rectifier diodes

BYQ30E, BYQ30EB, BYQ30ED series

ultrafast, rugged

Fig.7. Maximum t

rr at Tj = 25 ˚C; per diode

Fig.8. Maximum I

rrm at Tj = 25 ˚C; per diode

Fig.9. Typical and maximum forward characteristic

F = f(VF); parameter Tj

Fig.10. Maximum Q

s at Tj = 25 ˚C; per diode

Fig.11. Transient thermal impedance; per diode;

th j-mb = f(tp).

trr / ns

100

1000

100

dIF/dt (A/us)

IF=1A

IF=10A

1.0

100

-dIF/dt (A/us)

Qs / nC

IF=10A

100

0.1

0.01

Irrm / A

100

-dIF/dt (A/us)

IF=1A

IF=10A

1us

10us

100us

1ms

10ms

100ms

10s

0.001

0.01

0.1

BYQ30E

pulse width, tp (s)

Transient thermal impedance, Zth j-mb (K/W)

D =

0.5

1.5

BYQ30

Forward voltage, VF (V)

Forward current, IF (A)

typ

max

Tj = 25 C

Tj = 150 C

October 1998

Rev 1.200

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