BYD52D datasheet(2/8 Pages) PHILIPS

2 / 8 page

1998 Dec 03

Philips Semiconductors

Preliminary speciﬁcation

Fast soft-recovery controlled

avalanche rectiﬁers

BYD52 series

FEATURES

• Glass passivated

• High maximum operating

temperature

• Low leakage current

• Excellent stability

• Guaranteed avalanche energy

absorption capability

• Available in ammo-pack.

DESCRIPTION

Cavity free cylindrical glass SOD120

package through Implotec

™(1)

technology. This package is

hermetically sealed and fatigue free

as coefficients of expansion of all

used parts are matched.

(1) Implotec is a trademark of Philips.

Fig.1 Simplified outline (SOD120) and symbol.

handbook, halfpage

MGL571

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

ELECTRICAL CHARACTERISTICS

Tj =25 °C unless otherwise speciﬁed.

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

VRRM

repetitive peak reverse voltage

BYD52D

−

200

BYD52G

−

400

BYD52J

−

600

continuous reverse voltage

BYD52D

−

200

BYD52G

−

400

BYD52J

−

600

IF(AV)

average forward current

Tamb =25 °C; printed-circuit board

mounting, pitch 5 mm, see Fig.6;

averaged over any 20 ms period;

see Fig.2

−

0.47

IFSM

non-repetitive peak forward current

t = 10 ms half sine wave;

Tj =25 °C; VR =VRRMmax

−

Tstg

storage temperature

−65

+175

°C

junction temperature

see ﬁg.3

−65

+175

°C

SYMBOL

PARAMETER

CONDITIONS

MAX.

UNIT

forward voltage

IF = 1 A; see Fig.4

3.6

reverse current

VR =VRRMmax

µA

VR =VRRMmax; Tj = 165 °C; see Fig.5

100

µA

trr

reverse recovery time

when switched from IF = 0.5 A to IR =1A;

measured at IR = 0.25 A; see Fig.7

BYD52D bảng dữ liệu(PDF) 2 Page - NXP Semiconductors

BYD52D bảng dữ liệu(HTML) 2 Page - NXP Semiconductors

Html Pages

1 2 3 4 5 6 7 8

bảng dữ liệu tải về

Link URL