| công cụ tìm kiếm bảng dữ liệu linh kiện điện tử |
|
NTJD2152P bảng dữ liệu(PDF) 1 Page - ON Semiconductor |
|
|
|||||||||||||||||||||||||||||
NTJD2152P bảng dữ liệu(HTML) 1 Page - ON Semiconductor |
|
1 / 6 page ![]() © Semiconductor Components Industries, LLC, 2006 March, 2006 − Rev. 3 1 Publication Order Number: NTJD2152/D NTJD2152P Trench Small Signal MOSFET 8 V, Dual P−Channel, SC−88 ESD Protection Features • Leading –8 V Trench for Low RDS(ON) Performance • ESD Protected Gate • Small Footprint (2 x 2 mm) • Same Package as SC−70−6 • Pb−Free Packages are Available Applications • Load Power switching • DC−DC Conversion • Li−Ion Battery Charging Circuits • Cell Phones, Media Players, Digital Cameras, PDAs MAXIMUM RATINGS (TJ = 25°C unless otherwise stated) Parameter Symbol Value Unit Drain−to−Source Voltage VDSS −8.0 V Gate−to−Source Voltage VGS ±8.0 V Continuous Drain Current (Based on RqJA) Steady State TA = 25 °C ID −0.775 A TA = 85 °C −0.558 Power Dissipation (Based on RqJA) Steady State TA = 25 °C PD 0.27 W TA = 85 °C 0.14 Continuous Drain Current (Based on RqJL) Steady State TA = 25 °C ID −1.1 A TA = 85 °C −0.8 Power Dissipation (Based on RqJL) Steady State TA = 25 °C PD 0.55 W TA = 85 °C 0.29 Pulsed Drain Current t ≤10 ms IDM ±1.2 A Operating Junction and Storage Temperature TJ, TSTG −55 to 150 °C Continuous Source Current (Body Diode) IS −0.775 A Lead Temperature for Soldering Purposes (1/8” from case for 10 s) TL 260 °C THERMAL RESISTANCE RATINGS (Note 1) Parameter Symbol Typ Max Unit Junction−to−Ambient – Steady State RqJA 400 460 °C/W Junction−to−Lead (Drain) – Steady State RqJL 194 226 Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Surface mounted on FR4 board using 1 oz Cu area = 0.9523 in sq. Top View MARKING DIAGRAM & PIN ASSIGNMENT http://onsemi.com SOT−363 SC−88 (6 LEADS) D1 G2 S2 S1 G1 6 5 4 1 2 3 V(BR)DSS RDS(on) TYP ID Max −8 V 0.22 W @ −4.5 V 0.32 W @ −2.5 V 0.51 W @ −1.8 V −0.775 A D2 See detailed ordering and shipping information in the package dimensions section on page 5 of this data sheet. ORDERING INFORMATION TA M G G 1 6 1 TA = Device Code M = Date Code G = Pb−Free Package D1 G2 S2 S1 G1 D2 (Note: Microdot may be in either location) SC−88/SOT−363 CASE 419B STYLE 28 |
Số phần tương tự - NTJD2152P |
|
Mô tả tương tự - NTJD2152P |
|
|
|
Link URL |
| Cho đến nay ALLDATASHEET có giúp ích cho doanh nghiệp của bạn hay không? [ DONATE ] |
Alldatasheet là | Quảng cáo | Liên lạc với chúng tôi | Chính sách bảo mật | Liên kết đến bảng dữ liệu | Trao đổi link | Tìm kiếm theo nhà sản xuất All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |