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32G431 bảng dữ liệu(PDF) 109 Page - STMicroelectronics |
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32G431 bảng dữ liệu(HTML) 109 Page - STMicroelectronics |
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109 / 198 page ![]() DS12589 Rev 6 109/198 STM32G431x6 STM32G431x8 STM32G431xB Electrical characteristics 160 To complete these trials, ESD stress can be applied directly on the device, over the range of specification values. When unexpected behavior is detected, the software can be hardened to prevent unrecoverable errors occurring (see application note AN1015). Electromagnetic Interference (EMI) The electromagnetic field emitted by the device are monitored while a simple application is executed (toggling 2 LEDs through the I/O ports). This emission test is compliant with IEC 61967-2 standard which specifies the test board and the pin loading. 5.3.12 Electrical sensitivity characteristics Based on three different tests (ESD, LU) using specific measurement methods, the device is stressed in order to determine its performance in terms of electrical sensitivity. Electrostatic discharge (ESD) Electrostatic discharges (a positive then a negative pulse separated by 1 second) are applied to the pins of each sample according to each pin combination. The sample size depends on the number of supply pins in the device (3 parts × (n+1) supply pins). This test conforms to the ANSI/JEDEC standard. Table 49. EMI characteristics Symbol Parameter Conditions Monitored frequency band Max vs. [fHSE/fHCLK] Unit 8 MHz / 170 MHz SEMI Peak level VDD = 3.6 V, TA = 25 °C, LQFP100 package compliant with IEC 61967-2 0.1 MHz to 30 MHz 3 dBµV 30 MHz to 130 MHz -2 130 MHz to 1 GHz 25 1 GHz to 2 GHz 18 EMI Level 4 - Table 50. ESD absolute maximum ratings Symbol Ratings Conditions Class Maximum value(1) Unit VESD(HBM) Electrostatic discharge voltage (human body model) TA = +25 °C, conforming to ANSI/ESDA/JEDEC JS-001 2 2000 V VESD(CDM) Electrostatic discharge voltage (charge device model) TA = +25 °C, conforming to ANSI/ESDA/JEDEC JS- 002 C1 250 V 1. Guaranteed by characterization results. |
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