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BYD127 bảng dữ liệu(PDF) 2 Page - NXP Semiconductors

tên linh kiện BYD127
Giải thích chi tiết về linh kiện  Ultra fast low-loss rectifier
PDF  8 Pages
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nhà sản xuất  PHILIPS [NXP Semiconductors]
Trang chủ  http://www.nxp.com
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BYD127 bảng dữ liệu(HTML) 2 Page - NXP Semiconductors

  BYD127 Datasheet HTML 1Page - NXP Semiconductors BYD127 Datasheet HTML 2Page - NXP Semiconductors BYD127 Datasheet HTML 3Page - NXP Semiconductors BYD127 Datasheet HTML 4Page - NXP Semiconductors BYD127 Datasheet HTML 5Page - NXP Semiconductors BYD127 Datasheet HTML 6Page - NXP Semiconductors BYD127 Datasheet HTML 7Page - NXP Semiconductors BYD127 Datasheet HTML 8Page - NXP Semiconductors  
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1999 Nov 15
2
Philips Semiconductors
Product specification
Ultra fast low-loss rectifier
BYD127
FEATURES
• Glass passivated
• High maximum operating
temperature
• Low leakage current
• Excellent stability
• Available in ammo-pack
• Smallest surface mount rectifier
outline.
DESCRIPTION
Cavity free cylindrical glass SOD87
package through Implotec
™(1)
technology. This package is
hermetically sealed and fatigue free
as coefficients of expansion of all
used parts are matched.
(1) Implotec is a trademark of Philips.
handbook, 4 columns
MAM061
ka
Fig.1 Simplified outline (SOD87) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
ELECTRICAL CHARACTERISTICS
Tj =25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VRRM
repetitive peak reverse voltage
−
200
V
VR
continuous reverse voltage
−
200
V
IF(AV)
average forward current
Ttp = 145 °C;
averaged over any 20 ms period;
see Figs 5 and 6
−
1A
Ttp =95 °C;
averaged over any 20 ms period;
see Figs 5 and 6
−
2A
IFSM
non-repetitive peak forward current
t = 10 ms half sinewave;
VR =VRRMmax
−
25
A
Tstg
storage temperature
−65
+175
°C
Tj
junction temperature
−65
+175
°C
SYMBOL
PARAMETER
CONDITIONS
MAX.
UNIT
VF
forward voltage
IF = 1 A; see Fig.2; Tj = 150 °C;
0.8
V
IF = 1 A; see Fig.2
0.93
V
IR
reverse current
VR =VRRMmax; see Fig.3
2
µA
VR =VRRMmax; Tj = 150 °C; see Fig.3
50
µA
trr
reverse recovery time
when switched from IF = 0.5 A to IR =1A;
measured at IR = 0.25 A
25
ns



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