CAT93C46

2

Doc No. 1106, Rev. F

© 2007 by Catalyst Semiconductor, Inc.

Characteristics subject to change without notice

D.C. OPERATING CHARACTERISTICS

Symbol

Parameter

Test Conditions

Min

Max

Units

Power Supply Current

1

mA

(Write)

Power Supply Current

500

µA

(Read)

Power Supply Current

2

µA

(Standby) (x8 Mode)

ORG=GND

Power Supply Current

1

µA

(Standby) (x16Mode)

Input Leakage Current

1

µA

Output Leakage Current

µA

CS = GND

Input Low Voltage

4.5V

-0.1

0.8

V

Input High Voltage

4.5V

2

V

Input Low Voltage

1.8V

0

V

Input High Voltage

1.8V

V

Output Low Voltage

4.5V

0.4

V

Output High Voltage

4.5V

2.4

V

µA

Output Low Voltage

1.8V

0.2

V

Output High Voltage

1.8V

V

µA

Notes:

(1) Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings

only, and functional operation of the device at these or any other conditions outside of those listed in the operational sections of this

specification is not implied. Exposure to any absolute maximum rating for extended periods may affect device performance and reliability.

(3) These parameters are tested initially and after a design or process change that affects the parameter according to appropriate AEC-Q100

and JEDEC test methods.

Storage Temperature

-65

°C to +150°C

-0.5 V to +6.5 V

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