CAT808

Doc. No. 3024 Rev. A

2

© 2006 Catalyst Semiconductor, Inc.

Characteristics subject to change without notice

ABSOLUTE MAXIMUM RATINGS

(1)

Parameters

Ratings

Units

Temperature under Bias

-55 to +125

ºC

Storage Temperature

-65 to +150

ºC

Voltage on any Pin with Respect to GND

(2)(3)

V

-2.0 to 7.0

V

Lead Soldering temperature (10 seconds)

+300

ºC

TSOT-23-5

250

mW

Power Dissipation

SOT-89

500

mW

RECOMMENDED OPERATING CONDITIONS

Parameters

Ratings

Units

+1.2 to +6.0

V

Operating Temperature Range

-40 to +85

ºC

DC ELECTRICAL CHARACTERISTICS

Symbol

Parameter

Conditions

Min Typ. Max

Units

Detection Voltage, 27

2.62

2.7 2.78

Detection Voltage, 32

3.12

3.2 3.28

V

-

2.4

5

-

3.5

7

Current Consumption

-

5

10

µA

0.6

1.4

-

Output SinkCurrent

2.9

5

-

mA

Output Leakage Current

-

-

1

µA

Response Time

–

-

-

60

µs

Detection Voltage

Temperature Coefficient

(4)

-

±10 ±100 ppm/ºC

Notes:

(1) Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings

only and functional operation of the devices at these or any other conditions outside of those listed in the operational sections of this

specification is not implied. Exposure to any absolute maximum rating for extended periods may affect device performance and

reliability.

(2) The Minimum DC input voltage is -0.5V. During transitions, inputs may undershoot to -2.0V for periods of less than 20ns. Maximum DC

(4) The temperature change ratio in the detection voltage [ppm/°C] is calculated by using the following equation:

]

C

/º

ppm

[

000

,

000

,

1

V

-

T

V

DET

A

DET

×

•

Δ

−

Δ