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MMBT5551-B-AE3-B-R bảng dữ liệu(PDF) 2 Page - Unisonic Technologies

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Giải thích chi tiết về linh kiện  HIGH VOLTAGE SWITCHING TRANSISTOR
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MMBT5551-B-AE3-B-R bảng dữ liệu(HTML) 2 Page - Unisonic Technologies

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MMBT5551
NPN EPITAXIAL SILICON TRANSISTOR
UNISONICTECHNOLOGIESCO.,LTD
2 of 4
www.unisonic.com.tw
QW-R206-010,D
ABSOLUATE MAXIUM RATINGS (Ta = 25℃)
PARAMETER
SYMBOL
RATINGS
UNIT
Collector -Base Voltage
VCBO
180
V
Collector -Emitter Voltage
VCEO
160
V
Emitter -Base Voltage
VEBO
6
V
DC Collector Current
IC
600
mA
Power Dissipation
PD
350
mW
Operating and Storage Junction Temperature
TJ, TSTG
-55 ~ +150
℃
Note Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (Ta= 25℃, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNIT
Collector-Base Breakdown Voltage
VCBO
IC=100µA, IE=0
180
V
Collector-Emitter Breakdown Voltage
VCEO
IC=1mA, IB=0
160
V
Emitter-Base Breakdown Voltage
VEBO
IE=10µA, IC=0
6
V
Collector Cut-off Current
ICBO
VCB=120V, IE=0
50
nA
Emitter Cut-off Current
IEBO
VBE=4V, IC =0
50
nA
DC Current Gain(note)
hFE
VCE=5V, IC =1mA
VCE=5V, IC =10mA
VCE=5V, IC =50mA
80
80
80
160
400
Collector-Emitter Saturation Voltage
VCE(SAT)
IC=10mA, IB=1mA
IC=50mA, IB=5mA
0.15
0.2
V
Base-Emitter Saturation Voltage
VBE(SAT)
IC=10mA, IB=1mA
IC=50mA, IB=5mA
1
1
V
Current Gain Bandwidth Product
fT
VCE=10V, IC =10mA, f=100MHz
100
300
MHz
Output Capacitance
Cob
VCB=10V, IE=0, f=1MHz
6.0
pF
Noise Figure
NF
IC=0.25mA, VCE=5V
RS=1kΩ, f=10Hz ~ 15.7kHz
8
dB
Note: Pulse test: PW<300
µs, Duty Cycle<2%
CLASSIFICATION OF hFE
RANK
A
B
C
RANGE
80-170
150-240
200-400



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