1997 Aug 13

8

Philips Semiconductors

Product specification

Silicon diffused power transistors

BUW13F; BUW13AF

Fig.8 Base-emitter and collector-emitter saturation voltages as functions of collector current; typical values.

handbook, full pagewidth

0

2.0

MGB915

110

IC (A)

VBEsat

VCEsat

(V)

0.5

1.5

1.0

(1)

(2)

(3)

(4)

Fig.9 Base-emitter voltage as a function of base current; typical values.

handbook, full pagewidth

6

IB (A)

1.6

1.4

0.8

0

VBE

(V)

MGB912

1.2

1.0

4

2

1

5

3

(1)

(2)

(3)