UT138F datasheet(2/5 Pages) UTC

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UTC UT138F/G

TRIAC

UTC UNISONIC TECHNOLOGIES CO., LTD. 2

QW-R401-013,B

*Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac may switch

to the on-state. The rate of rise of current should not exceed 15A/

µs.

THERMAL RESISTANCES

PARAMETER

SYMBOL

MIN

TYP

MAX

UNIT

Thermal Resistance, Junction to Mounting Base

Full cycle

Half cycle

Rthj-mb

1.5

2.0

K/W

Thermal Resistance, Junciton to Ambient

In free air

Rthj-a

K/W

STATIC CHARACTERISTICS (Tj=25°C,unless otherwise specified)

MAX

PARAMETER

SYMBOL

CONDITIONS

MIN

TYP

UT138F UT138G

UNIT

Gate trigger current

IGT

VD=12V, IT=0.1A

T2+ G+

T2+ G-

T2- G-

T2- G+

100

Latching current

VD=12V, IGT=0.1A

T2+ G+

T2+ G-

T2- G-

T2- G+

Holding current

VD = 12 V,IGT = 0.1 A

On-state voltage

IT=15A

1.4

1.65

VD=12V, IT=0.1A

0.7

1.5

Gate trigger voltage

VGT

VD=400V, IT=0.1A, Tj=125

°C

0.25

0.4

Off-state leakage current

VD=VDRM(max) , Tj=125

°C

0.1

0.5

DYNAMIC CHARACTERISTICS(Tj=25°C,unless otherwise specified)

MIN

PARAMETER

SYMBOL

CONDITIONS

UT138F UT138G

TYP

MAX UNIT

Critical rate of rise of

Off-state voltage

dVD /dt

VDM = 67% VDRM(max) , Tj =125°C;

exponential waveform, gate open

circuit

200

250

V/µs

Critical rate of change of

Commutating voltage

dVcom/dt

VDM=400V,Tj=95°C,IT(RMS)=12A,

dIcom /dt =5.4A/ms, gate open circuit

V/µs

Gate controlled turn-on

time

tgt

ITM = 16 A, VD= VDRM(max) , IG=0.1A,

dIG/dt=5A/µs

µs

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