UP1868L-AA3-E-R datasheet(2/4 Pages) UTC

2 / 4 page

UP1868

PNP SILICON TRANSISTOR

UNISONICTECHNOLOGIESCO.,LTD

2 of 4

www.unisonic.com.tw

QW-R207-015,A

ABSOLUTE MAXIMUM RATINGS (Ta=25℃)

PARAMETER

SYMBOL

RATINGS

UNIT

Collector-Base Voltage

VCBO

-15

Collector-Emitter Voltage

VCEO

-12

Emitter-Base Voltage

VEBO

-6

Peak Pulse Current

IC(PEAK)

-20

Continuous Collector Current

-6

Power Dissipation

Junction Temperature

+150

℃

Storage Temperature

TSTG

-40 ~ +150

℃

Note Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

ELECTRICAL CHARACTERISTICS (at Ta = 25℃ unless otherwise specified)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX UNIT

BVCBO IC=-100µA

-15

BVCEO IC=-10mA

-12

Breakdown Voltage (Note)

BVEBO IE=-100µA

-6

IC=-500mA,IB=-5mA

-55

-100

IC=-2A, IB=-50mA

-132

-160

Collector-Emitter Saturation Voltage

(Note)

VCE(SAT)

IC=-6A, IB=-250mA

-440

Base-Emitter Saturation Voltage

VBE(SAT) IC=-6A, IB=-250mA

-1050 -1200

Base-Emitter Turn-On Voltage (Note)

VBE(ON) VCE=-1V, IC=-6A

-950 -1050

VCB=-12V

-10

Collector Cut-Off Current

ICBO

VCB=-12V,Ta=100℃

-1.0

µA

Emitter Cut-Off Current

IEBO

VEB=-6V

-10

hFE1

VCE=-1V , IC=-10mA

300

hFE2

VCE=-1V , IC=-500mA

300

1000

hFE3

VCE=-1V , IC=-5mA

200

DC Current Gain (Note)

hFE4

VCE=-1V , IC=-10A

150

Current Gain Bandwidth Product

VCE=-10V, IC=-100mA, f=50MHz

MHz

Output Capacitance

Cob

VCB=-20V, f=1MHz

161

tON

IC=-4A, IB1=-400mA

120

Switching Times

tOFF

IB2=400mA, VCC=-10V

116

Note: Pulse test: Pulse Width=300

μs, Duty Cycle≦2%

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