UT136F datasheet(2/5 Pages) UTC

2 / 5 page

UTC UT136F/G

TRIAC

UTC UNISONIC TECHNOLOGIES CO., LTD.

QW-R401-010,C

THERMAL RESISTANCES

PARAMETER

SYMBOL

MIN

TYP

MAX

UNIT

Thermal resistance, Junction to mounting base

full cycle

half cycle

Rth j-mb

3.0

3.7

K/W

Thermal resistance, Junction to ambient

(In free air)

Rth j-a

K/W

STATIC CHARACTERISTICS (Tj=25°C,unless otherwise specified)

MAX

PARAMETER

SYMBOL

CONDITIONS

MIN

TYP

UT136F

UT136G

UNIT

Gate trigger current

IGT

VD=12V, IT=0.1A

T2+ G+

T2+ G-

T2- G-

T2- G+

100

Latching current

VD=12V, IGT=0.1A

T2+ G+

T2+ G-

T2- G-

T2- G+

Holding current

VD = 12 V, IGT = 0.1 A

On-state voltage

IT=5A

1.4

1.70

VD=12V, IT=0.1A

0.7

1.5

Gate trigger voltage

VGT

VD=400V, IT=0.1A,

Tj=125

°C

0.25

0.4

Off-state leakage current

VD=VDRM(max) , Tj=125

°C

0.1

0.5

DYNAMIC CHARACTERISTICS(Tj=25°C,unless otherwise specified)

MIN

PARAMETER

SYMBOL

CONDITIONS

UT136F

UT136G

TYP MAX UNIT

Critical rate of rise of

Off-state voltage

dVD /dt

VDM = 67% VDRM(max) , Tj =125°C,

exponential waveform, gate open

circuit

200

250

V/µs

Critical rate of change of

Commutating voltage

dVcom/dt

VDM=400V, Tj=95°C, IT(RMS)=4A,

dIcom /dt =1.8A/ms, gate open

circuit

V/µs

Gate controlled turn-on

time

tgt

ITM = 6 A, VD= VDRM(max) , IG=0.1A,

dIG/dt=5A/µs

µs

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