BC856L-A-AE3-R datasheet(2/4 Pages) UTC

2 / 4 page

BC856/BC857/BC858

PNP SILICON TRANSISTOR

UNISONICTECHNOLOGIESCO.,LTD

2 of 4

www.unisonic.com.tw

QW-R206-028,B

ABSOLUTE MAXIMUM RATINGS (Ta=25°C, unless otherwise specified)

PARAMETER

SYMBOL

RATINGS

UNIT

BC856

-80

BC857

-50

Collector-Base Voltage

BC858

VCBO

-30

BC856

-65

BC857

-45

Collector-Emitter Voltage

BC858

VCEO

-30

Emitter-Base Voltage

VEBO

-5

Collector Dissipation

310

Collector Current (DC)

-100

Junction Temperature

+150

°C

Storage Temperature

TSTG

-40 ~ +150

°C

Note Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise specified)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX UNIT

Collector Cut-Off Current

ICBO

VCB=-30V, IE=0

-15

DC Current Gain

hFE

VCE=-5V, IC=-2mA

110

800

IC=-10mA,IB=-0.5mA

-90

-300

Collector-Emitter Saturation Voltage

VCE(SAT)

IC=-100mA,IB=-5mA

-250

-650

IC=-10mA,IB=-0.5mA

-700

Base-Emitter Saturation Voltage

VBE(SAT)

IC=-100mA,IB=-5mA

-900

VCE=-5V,IC=-2mA

-600

-660

-750

Base-Emitter On Voltage

VBE(ON)

VCE=-5V,IC=-10mA

-800

Current Gain Bandwidth Product

VCE=-5V,IC=-10mA, f=100MHz

150

MHz

Output Capacitance

Cob

VCB=-10V,IE=0,f=1MHz

Noise Figure

VCE=-5V, IC=-200μA, f=1KHz, RG=2KΩ

CLASSIFICATION OF hFE

RANK

RANGE

110-220

200-450

420-800

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