BC817-25-AE3-R datasheet(2/4 Pages) UTC

2 / 4 page

BC817

NPN EPITAXIAL SILICON TRANSISTOR

UNISONICTECHNOLOGIESCO.,LTD

www.unisonic.com.tw

QW-R206-025.B

ABSOLUTE MAXIMUM RATING(Ta=25°C, unless otherwise specified)

PARAMETER

SYMBOL

RATINGS

UNIT

Collector-Emitter Voltage

VCEO

Collector-Base Voltage

VCES

Emitter-Base Voltage

VEBO

5.0

Collector Current -Continuous

1.5

Power Dissipation

Derate above 25

°C

350

2.8

mW/

°C

Junction Temperature

150

℃

Storage Temperature

TSTG

-40 ~ +150

℃

Note 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

2. The device is guaranteed to meet performance specification within 0℃~+70℃ operating temperature range

and assured by design from –20℃~+85℃.

THERMAL CHARACTERISTICS (Ta=25°C, unless otherwise specified)

CHARACTERISTIC

SYMBOL

RATING (Note)

UNIT

Thermal Resistance, Junction to Ambient

350

°C/W

Note: Device mounted on FR-4 PCB 40mm×40mm×1.5mm.

ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise specified)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN TYP MAX UNIT

OFF CHARACTERISTICS

Collector-Emitter Breakdown Voltage

V(BR)CEO

IC=10mA, IB=0

Collector-Base Breakdown Voltage

V(BR)CES

IC=100µA,IE=0

Emitter-Base Breakdown Voltage

V(BR)EBO

IE=10µA, Ic=0

Collector-Cutoff Current

ICBO

VCB=20V

VCB=20V,Ta=150°C

100

µA

ON CHARACTERISTICS

hFE1*

Ic=100mA,VCE=1.0V

See Classification

DC Current Gain

hFE2

Ic=500mA, VCE=1.0V

Collector-Emitter Saturation Voltage

VCE(SAT)

Ic=500mA,IB=50Ma

0.7

Base-Emitter On Voltage

VBE(ON)

Ic=500mA, VCE=1.0V

1.2

CLASSIFICATION OF hFE1*

RANK

BC817-16

BC817-25

BC817-40

RANGE

100-250

160-400

250-600

BC817-25-AE3-R bảng dữ liệu(PDF) 2 Page - Unisonic Technologies

BC817-25-AE3-R bảng dữ liệu(HTML) 2 Page - Unisonic Technologies

Html Pages

1 2 3 4

bảng dữ liệu tải về

Link URL