DTA114T

PNP SILICON TRANSISTOR

UNISONIC TECHNOLOGIES CO., LTD

2 of 3

www.unisonic.com.tw

QW-R206-061,B

PARAMETER

SYMBOL

RATING

UNIT

Collector-Base Voltage

-50

V

Collector-Emitter Voltage

-50

V

Emitter-Base Voltage

-5

V

Collector Current

-100

mA

SOT-23

200

mW

Collector Power Dissipation

SOT-323/SOT-523

150

mW

Junction Temperature

+150

℃

Storage Temperature

-55~+150

℃

Note Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP MAX UNIT

Collector-Base Breakdown Voltage

-50

V

Collector-Emitter Breakdown Voltage

-50

V

Emitter-Base Breakdown Voltage

-5

V

Collector-Emitter Saturation Voltage

-0.3

V

Collector Cutoff Current

-0.5

μA

Emitter Cutoff Current

-0.5

μA

DC Current Gain

100

250

600

Input Resistance

7

10

13

kΩ

Transition Frequency

250

MHz

* Transition frequency of the device