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2SB1412-TN3-F-R bảng dữ liệu(PDF) 2 Page - Unisonic Technologies

tên linh kiện 2SB1412-TN3-F-R
Giải thích chi tiết về linh kiện  HIGH VOLTAGE SWITCHING TRANSISTOR
PDF  5 Pages
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nhà sản xuất  UTC [Unisonic Technologies]
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2SB1412-TN3-F-R bảng dữ liệu(HTML) 2 Page - Unisonic Technologies

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2SB1412
PNP EPITAXIAL SILICON TRANSISTOR
UNISONICTECHNOLOGIESCO.,LTD
2 of 5
www.unisonic.com.tw
QW-R209-021,A
ABSOLUTE MAXIMUM RATING (Ta=25°C , unless otherwise specified)
PARAMETER
SYMBOL
LIMITS
UNIT
Collector-Base Voltage
VCBO
-30
V
Collector-Emitter Voltage
VCEO
-20
V
Emitter-Base Voltage
VEBO
-6
V
Collector Current(DC)
IC
-5
A
Collector Current(PULSE) Single pulse, Pw=10ms
ICP
-10
A
Collector Power Dissipation
PD
1
W
Collector Power Dissipation (note2)
PD
10(TC=25°C)
W
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-40 ~ +150
°C
Note 1.Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2.When mounted on a 40*40*0.7mm ceramic board.
ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNIT
Collector Base Breakdown Voltage
BVCBO
IC= -50μA
-30
V
Collector Emitter Breakdown Voltage
BVCEO
IC= -1mA
-20
V
Emitter Base Breakdown Voltage
BVEBO
IE= -50μA
-6
V
Collector Cut-Off Current
ICBO
VCB= -20V
-0.5
μA
Emitter Cut-Off Current
IEBO
VEB= -5V
-0.5
μA
DC Current Transfer Ratio
hFE
VCE= -2V,Ic= -0.5A
82
390
Collector-Emitter Saturation Voltage
VCE(SAT) IC/IB= -4A/-0.1A
-1.0
V
Transition Frequency
fT
VCE= -6V, IE= 50 mA, f=30MHz
120
MHz
Output Capacitance
Cob
VCB= -20V, IE= 0 A, f=1MHz
60
pF
CLASSIFICATION OF hFE
RANK
P
Q
R
RANGE
82-180
120-270
180-390



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