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2012-2020 Microchip Technology Inc.

DS20005135C-page 21

SST25PF020B

6.0

ELECTRICAL SPECIFICATIONS

Absolute Maximum Ratings (†)

Temperature under bias ..........................................................................................................................-55°C to +125°C

Storage temperature ...............................................................................................................................-65°C to +150°C

DC voltage on any pin to ground potential...........................................................................................-0.5V to VDD+0.5V

Transient voltage (<20 ns) on any pin to ground potential...................................................................-2.0V to VDD+2.0V

Package power dissipation capability (TA = 25°C)....................................................................................................1.0W

Surface mount solder reflow temperature.......................................................................................260°C for 10 seconds

Output short circuit current(1) ..................................................................................................................................50 mA

† NOTICE: Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the

device. This is a stress rating only and functional operation of the device at those or any other conditions above those

indicated in the operational listings of this specification is not implied. Exposure to maximum rating conditions for

extended periods may affect device reliability.

Note 1: Output shorted for no more than one second. No more than one output shorted at a time.

TABLE 6-1:

OPERATING RANGE

Range

Ambient Temp.

VDD

Commercial

0°C to +70°C

2.3V-3.6V

TABLE 6-2:

AC CONDITIONS OF TEST(1)

Input Rise/Fall Time

Output Load

5 ns

CL = 30 pF

Note 1: See Figures 6-6 and 6-7.

TABLE 6-3:

DC CHARACTERISTICS

Symbol

Parameter

Limits

Test Conditions

Min.

Max.

Unit

IDDR

Read Current

—

12

mA

CE# = 0.1 VDD/0.9 VDD@33 MHz, SO = Open

IDDR3

Read Current

—

20

mA

CE# = 0.1 VDD/0.9 VDD@80 MHz, SO = Open

IDDW

Program and Erase Current

—

30

mA

CE# = VDD

ISB

Standby Current

—

30

µA

CE# =VDD, VIN = VDD or VSS

ILI

Input Leakage Current

—

1

µA

VIN = GND to VDD, VDD = VDD Max

ILO

Output Leakage Current

—

1

µA

VOUT = GND to VDD, VDD = VDD Max

VIL

Input Low Voltage

—

0.7

V

VDD = VDD Min

VIH

Input High Voltage

0.7 VDD

—

V

VDD = VDD Max

VOL

Output Low Voltage

—

0.2

V

IOL = 100 µA, VDD = VDD Min

VOL2

Output Low Voltage

—

0.4

V

IOL = 1.6 mA, VDD = VDD Min

IOH

Output High Voltage

VDD-0.2

—

V

IOH = -100 µA, VDD = VDD Min

TABLE 6-4:

CAPACITANCE (TA = 25°C, F = 1 MHZ, OTHER PINS OPEN)

Parameter

Description

Test Condition

Maximum

COUT(1)

Output Pin Capacitance

VOUT = 0V

12 pF

CIN(1)

Input Capacitance

VIN = 0V

6 pF

Note 1: This parameter is measured only for initial qualification and after a design or process change that could

affect this parameter.