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2N5551L-B-AB3-R bảng dữ liệu(PDF) 2 Page - Unisonic Technologies

tên linh kiện 2N5551L-B-AB3-R
Giải thích chi tiết về linh kiện  HIGH VOLTAGE SWITCHING TRANSISTOR
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nhà sản xuất  UTC [Unisonic Technologies]
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2N5551L-B-AB3-R bảng dữ liệu(HTML) 2 Page - Unisonic Technologies

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2N5551
NPN SILICON TRANSISTOR
UNISONICTECHNOLOGIESCO.,LTD
2 of 4
www.unisonic.com.tw
QW-R201-002.B
ABSOLUTE MAXIMUM RATINGS (Ta=25℃, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Base Voltage
VCBO
180
V
Collector-Emitter Voltage
VCEO
160
V
Emitter-Base Voltage
VEBO
6
V
Collector Dissipation
TO-92
625
mW
Collector Dissipation
SOT-89
PC
500
mW
Collector Current
IC
600
mA
Junction Temperature
TJ
+150
℃
Storage Temperature
TSTG
-55 ~ +150
℃
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (Ta=25℃, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNIT
Collector-Base Breakdown Voltage
BVCBO
IC=100µA, IE=0
180
V
Collector-Emitter Breakdown Voltage
BVCEO
IC=1mA, IB=0
160
V
Emitter-Base Breakdown Voltage
BVEBO
IE=10µA, IC=0
6
V
Collector Cut-off Current
ICBO
VCB=120V, IE=0
50
nA
Emitter Cut-off Current
IEBO
VBE=4V,IC=0
50
nA
DC Current Gain(Note)
hFE1
hFE2
hFE3
VCE=5V, IC=1mA
VCE=5V, IC=10mA
VCE=5V, IC=50mA
80
80
80
160
400
Collector-Emitter Saturation Voltage
VCE(SAT)
IC=10mA, IB=1mA
IC=50mA, IB=5mA
0.15
0.2
V
Base-Emitter Saturation Voltage
VBE(SAT)
IC=10mA, IB=1mA
IC=50mA, IB=5mA
1
1
V
Current Gain Bandwidth Product
fT
VCE=10V, IC=10mA, f=100MHz
100
300
MHz
Output Capacitance
Cob
VCB=10V, IE=0 f=1MHz
6.0
pF
Noise Figure
NF
IC=0.25mA, VCE=5V
RS=1kΩ, f=10Hz ~ 15.7kHz
8
dB
Note: Pulse test: PW<300µs, Duty cycle<2%
CLASSIFICATION OF hFE
RANK
A
B
C
RANGE
80-170
150-240
200-400



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