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N5027-R-TF3-E-T bảng dữ liệu(PDF) 2 Page - Unisonic Technologies

tên linh kiện N5027-R-TF3-E-T
Giải thích chi tiết về linh kiện  HIGH VOLTAGE AND HIGH RELIABILITY NPN TRANSISTOR
PDF  4 Pages
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nhà sản xuất  UTC [Unisonic Technologies]
Trang chủ  http://www.utc-ic.com
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N5027-R-TF3-E-T bảng dữ liệu(HTML) 2 Page - Unisonic Technologies

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N5027
NPN SILICON TRANSISTOR
UNISONIC TECHNOLOGIES CO., LTD
2 of 4
www.unisonic.com.tw
QW-R203-032,A
ABSOLUTE MAXIMUM RATINGS (Tc = 25℃)
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Base Voltage
VCBO
850
V
Collector-Emitter Voltage
VCEO
800
V
Collector-Emitter Voltage
VEBO
7
V
Peak Collector Current
IC
3
A
Collector Current (Pulse)
ICP
10
A
Base Current
IB
1.5
A
Peak Collector Consume Dissipation
PC
50
W
Peak Junction Temperature
TJ
150
℃
Storage Temperature
TSTG
-55 ~ +150
℃
Note
Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (T
C= 25℃, unless otherwise specified.)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNIT
Collector-Base Breakdown Voltage
BVCBO
IC=1mA, IE=0
850
V
Collector-Emitter Breakdown Voltage
BVCEO
IC=5mA, IB=0
800
V
Emitter-Base Breakdown Voltage
BVEBO
IE=1mA, IC=0
7
V
Collector-Emitter sustaining Voltage
VCEX(SUS)
IC=1.5A, IB1= -IB2=0.3A
L=2mH, Clamped
800
V
Collector Cut-off Current
ICBO
VCB=800V, IE=0
10
μA
Emitter Cut-off Current
IEBO
VEB=5V, IC=0
10
μA
hFE 1
VCE=5V, IC=0.2A
10
40
DC Current Gain
hFE 2
VCE=5V, IC=1A
6
Collector-Emitter Saturation Voltage
VCE (SAT)
IC=1A, IB=0.3A
1.1
V
Base-Emitter Saturation Voltage
VBE (SAT)
IC=1.5A, IB=0.3A
1.5
V
Output Capacitance
Cob
VCB=10V, f=1MHz, IE=0
60
pF
Current Gain Bandwidth Product
fT
VCE=10V, IC=0.2A
15
MHz
Turn ON Time
tON
0.5
μs
Storage Time
tSTG
3
μs
Fall Time
tF
VCC=400V
IC=5IB1= -2.5IB2=2A
RL=200Ω
0.3
μs
CLASSIFICATION of hFE1
RANK
N
R
O
RANGE
10 ~ 20
15 ~ 30
20 ~ 40



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