2SB857L-B-TN3-R datasheet(2/4 Pages) UTC

2 / 4 page

2SB857

PNP SILICON TRANSISTOR

UNISONICTECHNOLOGIESCO.,LTD

2 of 4

www.unisonic.com.tw

QW-R217-206,C

ABSOLUTE MAXIMUM RATING (Ta=25℃)

PARAMETER

SYMBOL

RATINGS

UNIT

Collector-Base Voltages

VCBO

-130

Collector-Emitter Voltage

VCEO

-100

Emitter-Base Voltage

VEBO

-5

Collector Current

-4

Collector Current (IC Peak)

IC(PEAK)

-8

TO-126C

1.5

Total Power Dissipation

TO-252

1.9

Junction Temperature

+150

℃

Storage Temperature

TSTG

-40 ~ +150

℃

Note Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

ELECTRICAL CHARACTERISTICS (Ta=25℃)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNIT

Collector-Base Breakdown Voltage

BVCBO

IC=-10µA, IE=0

-130

Collector-Emitter Breakdown Voltage

BVCEO

IC=-50mA, IB=0

-100

Emitter-Base Breakdown Voltage

BVEBO

IE=-10µA, IC=0

-5

Collector-Emitter Saturation Voltage

*VCE(SAT) IC=-2A, IB=-0.2A

-1

Base-Emitter Saturation Voltage

*VBE(ON) VCE=-4V, IC=-1A

-1

Collector Cut-off Current

ICBO

VCB=-130V, IC=0

-1

µA

*hFE1

VCE=-4V, IC=-0.1A

DC Current Gain

*hFE2

VCE=-4V, IC=-1A

320

Transition Frequency

VCE=-4V, IC=-500mA, f=100MHz

MHz

Note *Pulse Test: Pulse Width

380

≦

µS, Duty Cycle

2%.

≦

CLASSIFICATION OF hFE2

CLASSIFICATION

RANGE

60 ~ 120

100 ~ 200

160 ~ 320

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