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2SA2016L-AB3-R bảng dữ liệu(PDF) 2 Page - Unisonic Technologies

tên linh kiện 2SA2016L-AB3-R
Giải thích chi tiết về linh kiện  PNP EPITAXIAL PLANAR TRANSISTOR
PDF  6 Pages
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nhà sản xuất  UTC [Unisonic Technologies]
Trang chủ  http://www.utc-ic.com
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2SA2016L-AB3-R bảng dữ liệu(HTML) 2 Page - Unisonic Technologies

  2SA2016L-AB3-R Datasheet HTML 1Page - Unisonic Technologies 2SA2016L-AB3-R Datasheet HTML 2Page - Unisonic Technologies 2SA2016L-AB3-R Datasheet HTML 3Page - Unisonic Technologies 2SA2016L-AB3-R Datasheet HTML 4Page - Unisonic Technologies 2SA2016L-AB3-R Datasheet HTML 5Page - Unisonic Technologies 2SA2016L-AB3-R Datasheet HTML 6Page - Unisonic Technologies  
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2SA2016
PNP PLANAR TRANSISTOR
UNISONICTECHNOLOGIESCO.,LTD
2 of 6
www.unisonic.com.tw
QW-R208-018.B
ABSOLUTE MAXIMUM RATINGS (Ta=25°С)
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Base Voltage
VCBO
-50
V
Collector-Emitter Voltage
VCEO
-50
V
Emitter-Base Voltage
VEBO
-6
V
Collector Dissipation Mounted on a ceramic board
(250mm
2*0.8mm)
Pc
1.3
W
Collector Dissipation (Tc=25
°C)
Pc
3.5
W
Collector Current
Ic
-7
A
Collector Current
Icp
-10
A
Base Current
IB
-1.2
A
Junction Temperature
TJ
150
°C
Storage Temperature
TSTG
-55 to +150
°C
Note Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (Tc=25℃)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP MAX UNIT
Collector-to-Base Breakdown Voltage
BVCBO
Ic= -10µA, IE=0
-50
V
Collector-to- Emitter Breakdown Voltage
BVCEO
Ic= -1mA, RBE=∞
-50
V
Emitter-to-Base Breakdown Voltage
BVEBO
Ic=0, IE= -10µA
-6
V
Collector Cut-Off Current
ICBO
VCB= -40V, IE=0
-0.1
µA
Emitter Cut-Off Current
IEBO
VEB= -4V, Ic=0
-0.1
µA
DC Current Gain
hFE
VCE= -2V, Ic= -500mA
200
560
Ic= -3.5A, IB= -175mA
-0.23 -0.39
V
Collector-Emitter Saturation Voltage
VCE(SAT)
Ic= -2A, IB= -40mA
-0.24 -0.40
V
Base-Emitter Saturation Voltage
VBE(SAT)
Ic= -2A, IB= -40mA
-0.83 -1.2
V
Gain Bandwidth Product
fT
VCE= -10V, Ic= -500mA
290
MHz
Output Capacitance
Cob
VCB= -10V, f=1MHz
50
pF
Turn-on Time
tON
See specified Test Circuit
40
ns
Storage Time
tSTG
See specified Test Circuit
225
ns
Fall Time
tF
See specified Test Circuit
25
ns



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