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UN1066-AB3-R bảng dữ liệu(PDF) 2 Page - Unisonic Technologies

tên linh kiện UN1066-AB3-R
Giải thích chi tiết về linh kiện  HIGH SPEED SWITCHING TRANSISTOR
PDF  5 Pages
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nhà sản xuất  UTC [Unisonic Technologies]
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UN1066-AB3-R bảng dữ liệu(HTML) 2 Page - Unisonic Technologies

  UN1066-AB3-R Datasheet HTML 1Page - Unisonic Technologies UN1066-AB3-R Datasheet HTML 2Page - Unisonic Technologies UN1066-AB3-R Datasheet HTML 3Page - Unisonic Technologies UN1066-AB3-R Datasheet HTML 4Page - Unisonic Technologies UN1066-AB3-R Datasheet HTML 5Page - Unisonic Technologies  
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UN1066
NPN SILICON TRANSISTOR
UNISONICTECHNOLOGIESCO.,LTD
2 of 5
www.unisonic.com.tw
QW-R209-023,B
ABSOLUTE MAXIMUM RATING (Ta=25℃)
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-to-Base Voltage
BVCBO
20
V
Collector-to-Emitter Voltage
BVCEO
15
V
Emitter-to-Base Voltage
BVEBO
5
V
Collector Current
IC
6
A
Collector Current (Pulse)
ICP
9
A
Base Current
IB
600
mA
Collector Dissipation(TC=25 )
℃
PC
3.5
W
Junction Temperature
TJ
150
℃
Storage Temperature
TSTG
-55 ~ +150
℃
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (Ta=25℃)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNIT
Collector-to-Base Breakdown Voltage
BVCBO IC=10μ A, IE=0
20
V
Collector-to-Emitter Breakdown Voltage
BVCEO IC=1mA, RBE=∞
15
V
Emitter-to-Base Breakdown Voltage
BVEBO IE=10μA, IC=0
6
V
IC=1.5A, IB=30mA
180
mV
Collector-to-Emitter Saturation Voltage
VCE(SAT)
IC=3A, IB=60mA
300
mV
Base-to-Emitter Saturation Voltage
VBE(SAT) IC=1.5A, IB=30mA
1.2
V
Collector Cutoff Current
ICBO
VCB=12V, IE=0
0.1
µA
Emitter Cutoff Current
IEBO
VEB=4V, IC=0
0.1
µA
DC Current Gain
hFE
VCE=0.5V, IC=5A
250
Gain-Bandwidth Product
fT
VCE=2V, IC=500mA
100
MHz
Output Capacitance
Cob
VCB=10V, f=1MHz
50
pF
Turn-on Time
tON
Refer to Test Circuit
50
ns
Storage Time
tSTG
Refer to Test Circuit
250
ns
Fall Time
tF
Refer to Test Circuit
25
ns



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