MMDF2C03HD datasheet(2/10 Pages) ONSEMI

2 / 10 page

MMDF2C03HD

http://onsemi.com

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Note 3)

Characteristic

Symbol

Polarity

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Drain−Source Breakdown Voltage

(VGS = 0 Vdc, ID = 250 mAdc)

V(BR)DSS

−

Vdc

Zero Gate Voltage Drain Current

(VDS = 30 Vdc, VGS = 0 Vdc)

IDSS

(N)

(P)

−

1.0

mAdc

Gate−Body Leakage Current (VGS = ± 20 Vdc, VDS = 0)

IGSS

−

100

nAdc

ON CHARACTERISTICS (Note 4)

Gate Threshold Voltage

(VDS = VGS, ID = 250 mAdc)

VGS(th)

(N)

(P)

1.0

1.7

1.5

3.0

2.0

Vdc

Drain−to−Source On−Resistance

(VGS = 10 Vdc, ID = 3.0 Adc)

(VGS = 10 Vdc, ID = 2.0 Adc)

RDS(on)

(N)

(P)

−

0.06

0.17

0.070

0.200

Drain−to−Source On−Resistance

(VGS = 4.5 Vdc, ID = 1.5 Adc)

(VGS = 4.5 Vdc, ID = 1.0 Adc)

RDS(on)

(N)

(P)

−

0.065

0.225

0.075

0.300

Forward Transconductance

(VDS = 3.0 Vdc, ID = 1.5 Adc)

(VDS = 3.0 Vdc, ID = 1.0 Adc)

gFS

(N)

(P)

2.0

3.6

3.4

−

mhos

DYNAMIC CHARACTERISTICS

Input Capacitance

(VDS = 24 Vdc, VGS = 0 Vdc,

f = 1.0 MHz)

Ciss

(N)

(P)

−

450

397

630

550

Output Capacitance

Coss

(N)

(P)

−

160

189

225

250

Transfer Capacitance

Crss

(N)

(P)

−

126

SWITCHING CHARACTERISTICS (Note 5)

Turn−On Delay Time

(VDD = 15 Vdc, ID = 3.0 Adc,

VGS = 4.5 Vdc, RG = 9.1 W)

(VDD = 15 Vdc, ID = 2.0 Adc,

VGS = 4.5 Vdc, RG = 6.0 W)

td(on)

(N)

(P)

−

Rise Time

(N)

(P)

−

130

Turn−Off Delay Time

td(off)

(N)

(P)

−

126

Fall Time

(N)

(P)

−

194

390

Turn−On Delay Time

(VDD = 15 Vdc, ID = 3.0 Adc,

VGS = 10 Vdc, RG = 9.1 W)

(VDD = 15 Vdc, ID = 2.0 Adc,

VGS = 10 Vdc, RG = 6.0 W)

td(on)

(N)

(P)

−

8.0

9.0

Rise Time

(N)

(P)

−

Turn−Off Delay Time

td(off)

(N)

(P)

−

162

Fall Time

(N)

(P)

−

192

384

Total Gate Charge

(VDS = 10 Vdc, ID = 3.0 Adc,

VGS = 10 Vdc)

(VDS = 24 Vdc, ID = 2.0 Adc,

VGS = 10 Vdc)

(N)

(P)

−

11.5

14.2

Gate−Source Charge

(N)

(P)

−

1.5

1.1

−

Gate−Drain Charge

(N)

(P)

−

3.5

4.5

−

(N)

(P)

−

2.8

3.5

−

3. Negative signs for P−Channel device omitted for clarity.

4. Pulse Test: Pulse Width

≤ 300 ms, Duty Cycle ≤ 2%.

5. Switching characteristics are independent of operating junction temperature.

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