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STGWA60H65DFB bảng dữ liệu(PDF) 4 Page - STMicroelectronics

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Table 5. IGBT switching characteristics (inductive load)
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
td(on)
Turn-on delay time
VCE = 400 V, IC = 60 A,
RG = 10 Ω,
VGE = 15 V (see Figure 27.
Test circuit for inductive load
switching)
-
66
-
ns
tr
Current rise time
-
38
-
ns
(di/dt)on
Turn-on current slope
-
1216
-
A/µs
td(off)
Turn-off delay time
-
210
-
ns
tf
Current fall time
-
20
-
ns
Eon (1)
Turn-on switching energy
-
1590
-
µJ
Eoff (2)
Turn-off switching energy
-
900
-
µJ
Ets
Total switching energy
-
2490
-
µJ
td(on)
Turn-on delay time
VCE = 400 V,
IC = 60 A, RG = 10 Ω,
VGE = 15 V, TJ = 175 °C
(see Figure 27. Test circuit
for inductive load switching)
-
59
-
ns
tr
Current rise time
-
40
-
ns
(di/dt)on
Turn-on current slope
-
1230
-
A/µs
td(off)
Turn-off-delay time
-
242
-
ns
tf
Current fall time
-
147
-
ns
Eon (1)
Turn-on switching energy
-
2860
-
µJ
Eoff (2)
Turn-off switching energy
-
1255
-
µJ
Ets
Total switching energy
-
4115
-
µJ
1. Including the reverse recovery of the diode.
2. Including the tail of the collector current.
Table 6. Diode switching characteristics (inductive load)
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
trr
Reverse recovery time
IF = 60 A, VR = 400 V,
VGE = 15 V,
di/dt = 100 A/µs
(see Figure 27. Test circuit
for inductive load switching)
-
60
-
ns
Qrr
Reverse recovery charge
-
99
-
nC
Irrm
Reverse recovery current
-
3.3
-
A
dIrr/dt
Peak rate of fall of reverse recovery
current during tb
-
187
-
A/µs
Err
Reverse recovery energy
-
68
-
µJ
trr
Reverse recovery time
IF = 60 A, VR = 400 V,
VGE = 15 V,
di/dt = 100 A/µs,
TJ = 175 °C
(see Figure 27. Test circuit
for inductive load switching)
-
310
-
ns
Qrr
Reverse recovery charge
-
1550
-
nC
Irrm
Reverse recovery current
-
10
-
A
dIrr/dt
Peak rate of fall of reverse recovery
current during tb
-
59
-
A/µs
Err
Reverse recovery energy
-
674
-
µJ
STGW60H65DFB, STGWA60H65DFB, STGWT60H65DFB
Electrical characteristics
DS9535 - Rev 8
page 4/21



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