TIP105_03 datasheet(2/5 Pages) STMICROELECTRONICS

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THERMAL DATA

Rthj-case

Rthj-amb

Thermal Resistance Junction-case

Max

Thermal Resistance Junction-ambient

Max

1.56

62.5

oC/W

ELECTRICAL CHARACTERISTICS (Tcase = 25

oC unless otherwise specified)

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

ICEO

Collector Cut-off

Current (IB = 0)

VCE = -30 V

-50

µA

ICBO

Collector Cut-off

Current (IE = 0)

VCE = -60 V

-50

µA

IEBO

Emitter Cut-off Current

(IC = 0)

VEB = -5 V

-8

VCEO(sus)* Collector-Emitter

Sustaining Voltage

(IB = 0)

IC = -30 mA

-60

VCE(sat)*

Collector-Emitter

Saturation Voltage

IC = -3 A

IB = -6 mA

IC = -8 A

IB = -80 mA

-2

-2.5

VBE*

Base-Emitter Voltage

IC = -8 A

VCE = -4 V

-2.8

hFE*

DC Current Gain

IC = -3 A

VCE = -4 V

IC = -8 A

VCE = -4 V

IC = -3 A

VCE = -4 V

Group R

Group O

Group Y

2000

200

2000

4000

8000

18000

5000

9000

18000

VF*

Forward Voltage of

Commutation Diode

(IB = 0)

IF = - IC = 10 A

-2.8

The product is pre-selected in DC current gain (Group R, Group O and Group Y). STMicroelectronics reserves the right to ship either

groups according to production availability. Please contact your nearest STMicrolectronics sales office for delivery datails.

Safe Operating Area

DC Current Gain

TIP105

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