TIP102 datasheet(2/4 Pages) STMICROELECTRONICS

tên linh kiện	TIP102

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THERMAL DATA

Rthj-case

Rthj-amb

Thermal Resistance Junction-case

Max

Thermal Resistance Junction-ambient

Max

1.56

62.5

oC/W

ELECTRICAL CHARACTERISTICS (Tcase = 25

oC unless otherwise specified)

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

ICEO

Collector Cut-off

Current (IB = 0)

VCE = 50 V

µA

ICBO

Collector Cut-off

Current (IE = 0)

VCB = 100 V

µA

IEBO

Emitter Cut-off Current

(IC = 0)

VEB = 5 V

VCEO(sus)* Collector-Emitter

Sustaining Voltage

(IB = 0)

IC = 30 mA

100

VCE(sat)*

Collector-Emitter

Saturation Voltage

IC = 3 A

IB = 6 mA

IC = 8 A

IB = 80 mA

2.5

VBE*

Base-Emitter Voltage

IC = 8 A

VCE = 4 V

2.8

hFE*

DC Current Gain

IC = 3 A

VCE = 4 V

IC = 8 A

VCE = 4 V

1000

200

20000

VF*

Forward Voltage of

Commutation Diode

(IB = 0)

IF = - IC = 10 A

2.8

∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %

For PNP types voltage and current values are negative.

Safe Operating Area

TIP102 / TIP107

2/4

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