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SIP11203DB bảng dữ liệu(PDF) 2 Page - Vishay Siliconix

tên linh kiện SIP11203DB
Giải thích chi tiết về linh kiện  Demonstration Board
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SIP11203DB bảng dữ liệu(HTML) 2 Page - Vishay Siliconix

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Document Number: 74254
S-60997–Rev. A, 12-Jun-06
Vishay Siliconix
SiP11203DB
DEMONSTRATION BOARD INFORMATION
The demonstration board is an 8-layer board in the
eighth-brick form factor, manufactured in 2 oz copper.
The circuit schematics for the SiP11203 demonstration
board are illustrated in Figure 2 and Figure 3.
Power Conversion Circuit
The primary power circuit is a half-bridge configuration
with a 4:1 turns ratio transformer, T2, connected
between the switching pole of the half-bridge and the
center tap of the capacitive input filter. The half-bridge
capacitors C10 to C17 are configured as two series-con-
nected banks of four parallel-connected 1 µF ceramic
capacitors. Resistors R20 and R21 provide voltage bal-
ancing and discharge paths for the capacitor banks. The
primary side half-bridge circuit is driven using the Si9122
controller IC. This generates both the primary MOSFET
drive signals as well as the timing signals for the second-
ary side synchronous MOSFETs. These timing signals,
SRL and SRH, are coupled to the secondary through the
pulse transformer T1. The SiP11203 uses the timing
information to drive the secondary synchronous MOS-
FETs Q3 to Q6. The secondary side synchronous MOS-
FETs rectify the center-tapped transformer secondary
voltage, the output of which is filtered by the LC-filter L1-
C28-C31. L1 is a 900 nH inductor, C28 is a 22 µF tantalum
capacitor and C31 is a 100 µF ceramic capacitor.
RCD snubbers are placed across the synchronous rec-
tifier MOSFETs in order to clamp the secondary leakage
inductance voltage spike and reduce switching losses.
Some of the main switching circuit waveforms are plot-
ted in Figure 4. The converter efficiency over the line
and load range is depicted in Figure 5. Note that these
efficiency readings do not take account of the voltage
drops across the plug-in pins of the demonstration
board.
Bias Supply
The primary bias supply, VCC, is a 10.4 V supply that is
generated from an auxiliary winding, L1-B of the output
filter inductor. The auxiliary winding turns ratio is
3.333:1, resulting in an auxiliary winding voltage of
approximately 11 V during the inductor current ramp-
down period. This voltage is rectified and filtered by
diode D4 and capacitors C23 and C26. During startup
and other conditions such as short-circuited output, the
primary bias voltage is supplied by means of a 9.1 V lin-
ear pre-regulator on the Si9122 controller. An external
PNP pre-regulator transistor Q8 is provided to divert the
main power dissipation away from the Si9122 during the
period when the 9.1 V bias is being utilised. The rise of
VCC and VO during startup is depicted in Figure 6 (a). It
is clear that converter operation commences when VCC
reaches 9.1 V and, the change to the auxiliary bias level
can also be seen.
Figure 2. SiP11203 Demonstration Board Primary Side Schematic



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