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STGD14NC60K bảng dữ liệu(PDF) 5 Page - STMicroelectronics

tên linh kiện STGD14NC60K
Giải thích chi tiết về linh kiện  N-channel 14A - 600V -DPAK - D2PAK Short circuit rated PowerMESH TM IGBT
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nhà sản xuất  STMICROELECTRONICS [STMicroelectronics]
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STGD14NC60K bảng dữ liệu(HTML) 5 Page - STMicroelectronics

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STGB14NC60K - STGD14NC60K
Electrical characteristics
5/16
Table 5.
Switching on/off (inductive load)
Symbol
Parameter
Test condictions
Min.
Typ.
Max. Unit
td(on)
tr
(di/dt)on
Turn-on delay time
Current rise time
Turn-on current slope
VCC = 390V, IC = 7A
RG=10Ω, VGE= 15V,
Tj= 25°C (see Figure 16)
22.5
8.5
700
ns
ns
A/µs
td(on)
tr
(di/dt)on
Turn-on delay time
Current rise time
Turn-on current slope
VCC = 390V, IC = 7A
RG=10Ω, VGE= 15V,
Tj= 125°C (see Figure 16)
22
9.5
680
ns
ns
A/µs
tr(Voff)
td(off)
tf
Off voltage rise time
Turn-off delay time
Current fall time
Vcc = 390V, IC = 7A,
RGE = 10Ω , VGE = 15V
TJ = 25°C (see Figure 16)
60
116
75
ns
ns
ns
tr(Voff)
td(off)
tf
Off voltage rise time
Turn-off delay time
Current fall time
Vcc = 390V, IC = 7A,
RGE = 10Ω , VGE = 15V
Tj = 125°C (see Figure 16)
24
196
144
ns
ns
ns
Table 6.
Switching energy (inductive load)
Symbol
Parameter
Test condictions
Min
Typ.
Max
Unit
Eon (1)
Eoff
(2)
Ets
1.
Eon is the turn-on losses when a typical diode is used in the test circuit in figure 2. If the IGBT is offered in
a package with a co-pack diode, the co-pack diode is used as external diode. IGBTs & DIODE are at the
same temperature (25°C and 125°C)
2.
Turn-off losses include also the tail of the collector current.
Turn-on switching losses
Turn-off switching losses
Total switching losses
VCC = 390V, IC = 7A
RG=10Ω, VGE= 15V,
Tj= 25°C (see Figure 16)
82
155
237
µJ
µJ
µJ
Eon (1)
Eoff
(2)
Ets
Turn-on switching losses
Turn-off switching losses
Total switching losses
VCC = 390V, IC = 7A
RG=10Ω, VGE= 15V,
Tj= 125°C (see Figure 16)
131
370
501
µJ
µJ
µJ



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