1SMA64CAT3G datasheet(2/5 Pages) ONSEMI

2 / 5 page

1SMA10CAT3 Series

http://onsemi.com

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Peak Power Dissipation (Note 1)

@ TL = 25°C, Pulse Width = 1 ms

PPK

400

DC Power Dissipation @ TL = 75°C

Measured Zero Lead Length (Note 2)

Derate Above 75

°C

Thermal Resistance from Junction−to−Lead

RqJL

1.5

mW/

°C

°C/W

DC Power Dissipation (Note 3) @ TA = 25°C

Derate Above 25

°C

Thermal Resistance from Junction−to−Ambient

RqJA

0.5

4.0

250

mW/

°C

°C/W

Operating and Storage Temperature Range

TJ, Tstg

−65 to +150

°C

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the

Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect

device reliability.

1. 10 X 1000

ms, non−repetitive.

2. 1 in square copper pad, FR−4 board.

3. FR−4 board, using ON Semiconductor minimum recommended footprint, as shown in 403B case outline dimensions spec.

ELECTRICAL CHARACTERISTICS

(TA = 25°C unless otherwise noted)

Symbol

Parameter

IPP

Maximum Reverse Peak Pulse Current

Clamping Voltage @ IPP

VRWM

Working Peak Reverse Voltage

Maximum Reverse Leakage Current @ VRWM

VBR

Breakdown Voltage @ IT

Test Current

Bi−Directional TVS

IPP

VRWM

VC VBR

VRWM

VBR

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