BD681 datasheet(2/6 Pages) STMICROELECTRONICS

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THERMAL DATA

Rthj-case

Rthj-amb

Thermal Resistance Junction-case

Max

Thermal Resistance Junction-ambient

Max

3.12

100

oC/W

ELECTRICAL CHARACTERISTICS (Tcase = 25

oC unless otherwise specified)

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

ICBO

Collector Cut-off

Current (IE = 0)

VCE = rated VCBO

TC = 100

0.2

ICEO

Collector Cut-off

Current (IB = 0)

VCE = half rated VCEO

0.5

IEBO

Emitter Cut-off Current

(IC = 0)

VEB = 5 V

VCEO(sus)

∗ Collector-Emitter

Sustaining Voltage

(IB = 0)

IC = 50 mA

for BD677/677A/678/678A

for BD679/679A/680/680A

for BD681/682

100

VCE(sat)

∗ Collector-Emitter

Saturation Voltage

for BD677/678/679/680/681/682

IC = 1.5 A

IB = 30 mA

for BD677A/678A/679A/680A

IC = 2 A

IB = 40 mA

2.5

2.8

VBE

∗

Base-Emitter Voltage

for BD677/678/679/680/681/682

IC = 1.5 A

VCE = 3 V

for BD677A/678A/679A/680A

IC = 2 A

VCE = 3 V

2.5

hFE

∗

DC Current Gain

for BD677/678/679/680/681/682

IC = 1.5 A

VCE = 3 V

for BD677A/678A/679A/680A

IC = 2 A

VCE = 3 V

750

hfe

Small Signal Current

Gain

IC = 1.5 A

VCE = 3 V

f = 1MHz

* Pulsed: Pulse duration = 300

µs, duty cycle 1.5 %

For PNP types voltage and current values are negative.

Safe Operating Areas

Derating Curve

BD677/677A/678/678A/679/679A/680/680A/681/682

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