STB130NS04ZB-1 datasheet(4/16 Pages) STMICROELECTRONICS

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Electrical characteristics

STP130NS04ZB-STB130NS04ZB-STW130NS04ZB-STB130NS04ZB-1

4/16

Electrical characteristics

(TCASE=25°C unless otherwise specified)

Table 4.

On/off states

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source breakdown

voltage

ID = 1 mA, VGS = 0

-40 < Tj < 175 °C

IDSS

Zero gate voltage drain

current (VGS = 0)

VDS = 16 V,Tj = 25 °C

VDS = 16 V,Tj = 125 °C

100

µA

IGSS

Gate body leakage current

(VDS = 0)

VGS = ±10 V,

Tj = 25 °C

VGSS

Gate-source breakdown

voltage

IGS= ± 100µA18

VGS(th)

Gate threshold voltage

VDS = VGS = ID = 1 mA

RDS(on)

Static drain-source on

resistance

VGS = 10 V ,ID = 40 A

Ω

Table 5.

Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

gfs

(1)

Pulsed: pulse duration=300µs, duty cycle 1.5%

Forward transconductance

VDS =15V, ID = 40A

Ciss

Coss

Crss

Input capacitance

Output capacitance

Reverse transfer

capacitance

VDS =25V, f=1 MHz, VGS=0

2700

1275

285

td(on)

Turn-on delay time

Rise time

VDD = 17.5 V, ID = 40 A,

RG = 4.7 Ω, VGS = 10 V

(see Figure 13)

td(off)

Turn-off delay time

Fall time

VDD = 17.5 V, ID = 40 A,

RG = 4.7 Ω, VGS = 10 V

(see Figure 13)

220

100

Qgs

Qgd

Total gate charge

Gate-source charge

Gate-drain charge

VDD=20V, ID = 80A

VGS =10V

(see Figure 14)

105

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