Nexperia

PSMN2R2-40YSD

N-channel 40 V, 2.2 mΩ, 180 A standard level MOSFET in LFPAK56 using NextPower-S3 Schottky-Plus

technology

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

Dynamic characteristics

QGD

gate-drain charge

1.8

6.1

12

nC

QG(tot)

total gate charge

ID = 25 A; VDS = 20 V; VGS = 10 V;

Fig. 12; Fig. 13

29

45

63

nC

[1] 180A Continuous current has been successfully demonstrated during application tests. Practically the current will be limited by PCB,

thermal design and operating temperature.

5. Pinning information

Table 2. Pinning information

Pin

Symbol

Description

Simplified outline

Graphic symbol

1

S

source

2

S

source

3

S

source

4

G

gate

mb

D

mounting base; connected

to drain

mb

1 2 3 4

LFPAK56; Power-

SO8 (SOT669)

S

D

G

mbb076

6. Ordering information

Table 3. Ordering information

Package

Type number

Name

Description

Version

PSMN2R2-40YSD

LFPAK56;

Power-SO8

plastic, single-ended surface-mounted package; 4 terminals

SOT669

7. Marking

Table 4. Marking codes

Type number

Marking code

PSMN2R2-40YSD

2D2S40Y

8. Limiting values

Table 5. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol

Parameter

Conditions

Min

Max

Unit

VDS

drain-source voltage

25 °C ≤ Tj ≤ 175 °C

-

40

V

VDSM

peak drain-source

voltage

tp ≤ 20 ns; f ≤ 500 kHz; EDS(AL) ≤ 200 nJ;

pulsed

-

45

V

VDGR

drain-gate voltage

25 °C ≤ Tj ≤ 175 °C; RGS = 20 kΩ

-

40

V

VGS

gate-source voltage

-20

20

V

Ptot

total power dissipation

Tmb = 25 °C; Fig. 1

-

166

W

VGS = 10 V; Tmb = 25 °C; Fig. 2

[1]

-

180

A

ID

drain current

VGS = 10 V; Tmb = 100 °C; Fig. 2

-

140

A

IDM

peak drain current

pulsed; tp ≤ 10 µs; Tmb = 25 °C; Fig. 3

-

789

A

PSMN2R2-40YSD

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© Nexperia B.V. 2019. All rights reserved

Product data sheet

25 September 2019

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