2SB772 datasheet(3/8 Pages) STMICROELECTRONICS

tên linh kiện	2SB772

Giải thích chi tiết về linh kiện	PNP MEDIUM POWER TRANSISTOR

PDF	8 Pages

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nhà sản xuất	STMICROELECTRONICS [STMicroelectronics]

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2SB772

2 Electrical Characteristics

3/8

Electrical Characteristics

Table 3.

Electrical Characteristics (TCASE = 25°C; unless otherwise specified)

Note: 1 Pulsed duration = 300

μs, duty cycle ≤1.5%.

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

ICES

Collector Cut-off Current

(VBE = 0)

VCE = -60 V

-10

µA

ICEO

Collector Cut-off Current

(IB = 0)

VCE = -30 V

-100

µA

IEBO

Emitter Cut-off Current

(IC = 0)

VEB = -5 V

-10

µA

V(BR)CEO

Note: 1

Collector-Emitter Breakdown

Voltage

(IB = 0 )

IC = -10 mA

-30

V(BR)CBO

Collector-Base Breakdown

Voltage

(IE = 0 )

IC = -100 µA

-60

V(BR)EBO

Emitter-Base Breakdown Voltage

(IC = 0 )

IE = -100 µA

-5

VCE(sat)

Note: 1

Collector-Emitter Saturation

Voltage

IC = -1 A

IB = -50 mA

IC = -2 A

IB = -100 mA

IC = -3 A

IB = -150 mA

-0.4

-0.7

-1.1

VBE(sat)

Note: 1

Base-Emitter Saturation Voltage IC = -2 A

IB = -100 mA

-1.2

hFE

DC Current Gain

IC = -100 mA

VCE = -2 V

IC = -1 A

VCE = -2 V

IC = -3 A

VCE = -2 V

100

300

Transition Frequency

IC = -0.1 A

VCE = -10 V

100

MHz

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