AS4CM4EOQ datasheet(16/16 Pages) ALSC

tên linh kiện	AS4CM4EOQ

Giải thích chi tiết về linh kiện	4M X 4 CMOS Quad CAS DRAM (EDO) family

PDF	16 Pages

Scroll/Zoom	100%

nhà sản xuất	ALSC [Alliance Semiconductor Corporation]

Trang chủ	https://www.alliancememory.com

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16 / 16 page

AS4C4M4EOQ

AS4C4M4E1Q

3/22/01; v.1.0

Alliance Semiconductor

P. 16 of 16

CAS-before-RAS self refresh cycle

Capacitance 15

ƒ = 1 MHz, Ta = Room temperature

4C4M4EOQ ordering information

AS4C4M4E1Q ordering information

4C4M4EOQ family part numbering system

Parameter

Symbol

Signals

Test conditions

Max

Unit

Input capacitance

CIN1

A0 to A9

Vin = 0V

CIN2

RAS, UCAS, LCAS, WE, OE

Vin = 0V

DQ capacitance

CDQ

DQ0 to DQ15

Vin = Vout = 0V

Package \ RAS access time

50 ns

60 ns

Plastic SOJ, 300 mil, 24/26-pin

4C4M4EOQ-50JC

4C4M4EOQ-60JC

Plastic TSOP, 300 mil, 24/26-pin

4C4M4EOQ-50TC

4C4M4EOQ-60TC

Package \ RAS access time

50 ns

60 ns

Plastic SOJ, 300 mil, 24/26-pin

AS4C4M4E1Q-50JC

AS4C4M4E1Q-60JC

Plastic TSOP, 300 mil, 24/26-pin

AS4C4M4E1Q-50TC

AS4C4M4E1Q-60TC

AS4

4M4

–XX

DRAM

prefix

C = 5V CMOS

LC = 3.3V CMOS

4M×4

E0=4K refresh

E1=2K refresh

RAS access

time

Package:

J = SOJ 300 mil, 24/26

T = TSOP 300 mil, 24/26

Commercial temperature

range, 0°C to 70 °C

tRP

tRASS

tRPC

tCP

tCHS

tCEZ

RAS

UCAS,

LCAS

tRPS

tCSR

tRPC

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