PMH600UNE

20 V, N-channel Trench MOSFET

8 March 2019

Product data sheet

1. General description

N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN0606-3

(SOT8001) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

2. Features and benefits

• Low threshold voltage

• Very fast switching

• Trench MOSFET technology

• ElectroStatic Discharge (ESD) protection > 1 kV HBM

• Leadless ultra small and ultra thin SMD plastic package: 0.62 x 0.62 x 0.37 mm

3. Applications

• Relay driver

• High-speed line driver

• Low-side load switch

• Switching circuits

4. Quick reference data

Table 1. Quick reference data

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

VDS

drain-source voltage

-

-

20

V

VGS

gate-source voltage

Tj = 25 °C

-8

-

8

V

ID

drain current

VGS = 4.5 V; Tamb = 25 °C

[1]

-

-

800

mA

Static characteristics

RDSon

drain-source on-state

resistance

VGS = 4.5 V; ID = 600 mA; Tj = 25 °C

-

470

620

mΩ

[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and mounting pad for drain 1 cm2.