PHT6N06T

TrenchMOS™ standard level FET

Rev. 02 — 03 February 2003

Product data

M3D087

1.

Product profile

1.1 Description

N-channel enhancement mode field-effect transistor in a plastic package using

TrenchMOS™ technology.

Product availability:

PHT6N06T in SOT223.

1.2 Features

1.3 Applications

1.4 Quick reference data

2.

Pinning information

s Low on-state resistance

s Low QGD

s Fast switching

s Surface mounting package.

s DC to DC converters

s General purpose switching.

s VDS ≤ 55 V

s ID ≤ 5.5 A

s Ptot ≤ 8.3 W

s RDSon ≤ 150 mΩ

Table 1:

Pinning - SOT223, simplified outline and symbol

Pin

Description

Simplified outline

Symbol

1

gate (g)

SOT223

2

drain (d)

3

source (s)

4

drain (d)

4

123

MSB002 - 1

Top view

s

d

g

MBB076