ISCN459T datasheet(2/3 Pages) ISC

tên linh kiện	ISCN459T

Giải thích chi tiết về linh kiện	isc N-Channel MOSFET Transistor

PDF	3 Pages

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nhà sản xuất	ISC [Inchange Semiconductor Company Limited]

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isc N-Channel MOSFET Transistor

ISCN459T

ELECTRICAL CHARACTERISTICS (TC=25℃)

SYMBOL

PARAMETER

CONDITIONS

MIN

TYPE

MAX

UNIT

V(BR)DSS

Drain-Source Breakdown Voltage

VGS=0; ID= 250uA

100

VGS(TH)

Gate Threshold Voltage

VDS= VGS; ID= 250uA

2.0

4.0

RDS(ON)

Drain-Source On-stage Resistance

VGS=10V; ID=150A

2.55

m

IGSS

Gate Source Leakage Current

VGS=±20V;VDS=0

100

IDSS

Zero Gate Voltage Drain Current

VDS=100V; VGS=0

Ciss

Input Capacitance

VGS = 0V,

VDS = 50V,

f = 1.0MHz

7684

Coss

Output Capacitance

114

Crss

Reverse Transfer Capacitance

Total Gate Charge

VDD = 50V,

ID = 20A,

VGS = 10V

106

Qgs

Gate-Source Charge

Qgd

Gate-Drain Charge

td(on)

Turn-on Delay Time

VDD = 50V,

ID = 20A,

RG =10Ω

Turn-on Rise Time

td(off)

Turn-off Delay Time

Turn-off Fall Time

Drain - Source Body Diode Characteristics

VSD

Diode Forward Voltage

VGS=0V,IS=20A

1.2

trr

Reverse Recovery Time

VR=50V,IF=20A,

dIF/dt=100A/ms

Qrr

Reverse Recovery Charge

120

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