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BASH19MX2WT5G bảng dữ liệu(PDF) 2 Page - ON Semiconductor |
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BASH19MX2WT5G bảng dữ liệu(HTML) 2 Page - ON Semiconductor |
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2 / 6 page ![]() BASH16MX2W www.onsemi.com 2 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Reverse Voltage Leakage Current (VR = 80 Vdc) BASH16 (VR = 100 Vdc) BASH19 (VR = 150 Vdc) BASH20 (VR = 200 Vdc) BASH21 (VR = 80 Vdc, TJ = 150°C) BASH16 (VR = 25 Vdc, TJ = 150°C) BASH16 (VR = 100 Vdc, TJ = 150°C) BASH19 (VR = 150 Vdc, TJ = 150°C) BASH20 (VR = 200 Vdc, TJ = 150°C) BASH21 IR − − − − − − − − − 0.5 0.1 0.1 0.1 50 30 100 100 100 mAdc Reverse Breakdown Voltage (IBR = 100 mAdc) BASH16 BASH19 BASH20 BASH21 V(BR) 100 120 200 250 − − − − Vdc Forward Voltage (IF = 100 mAdc) (IF = 200 mAdc) VF − − 1.0 1.25 Vdc Diode Capacitance (VR = 0, f = 1.0 MHz) CD − 3.0 pF Reverse Recovery Time (IF = IR = 10 mAdc, RL = 50 W) BASH16 (IF = IR = 30 mAdc, RL = 100 W) BASH19/20/21 trr − − 6.0 50 ns Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. Notes: 1. A 2.0 kW variable resistor adjusted for a Forward Current (IF) of 10 mA. Notes: 2. Input pulse is adjusted so IR(peak) is equal to 10 mA. Notes: 3. tp » trr +10 V 2.0 k 820 W 0.1 mF D.U.T. VR 100 mH 0.1 mF 50 W OUTPUT PULSE GENERATOR 50 W INPUT SAMPLING OSCILLOSCOPE tr tp t 10% 90% IF IR trr t iR(REC) = 1.0 mA OUTPUT PULSE (IF = IR = 10 mA; MEASURED at iR(REC) = 1.0 mA) IF INPUT SIGNAL Figure 1. Recovery Time Equivalent Test Circuit |
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