DPG20C200PB datasheet(1/3 Pages) ISC

tên linh kiện	DPG20C200PB

Giải thích chi tiết về linh kiện	Schottky Barrier Rectifier

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Schottky Barrier Rectifier

DPG20C200PB

www.iscsemi.com

2023-8-18

1

FEATURES

·Multi-layer Metal -Silicon Potential Structure

·Low Leakage Current

·High Current Capability, High Efficiency

·High Junction Temperature Capability

MECHANICAL CHARACTERISTICS

·Low Voltage High Frequency Switching Power Supply

·Low Voltage High Frequency Invers Circuit

·Low Voltage Continued Circuit and Protection Circuit

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VRRM

VRMS

VR

Peak Repetitive Reverse Voltage

RMS Voltage

DC Blocking Voltage

200

V

IF(AV)

Average Rectified Forward Current

10

A

IFSM

Nonrepetitive Peak Surge Current

8.3ms single half sine-wave superimposed on rated load

conditions

35

A

TJ

Junction Temperature

-55~150

℃

Tstg

Storage Temperature Range

-55~175

℃

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX

UNIT

Rth j-c

Thermal Resistance,Junction to Case

2.3

℃

/W

Số phần tương tự - DPG20C200PB

nhà sản xuất	tên linh kiện	bảng dữ liệu	Giải thích chi tiết về linh kiện
IXYS Corporation	DPG20C200PB	127Kb / 4P	High Performance Fast Recovery Diode Low Loss and Soft Recovery Common Cathode
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Mô tả tương tự - DPG20C200PB

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DPG20C200PB bảng dữ liệu(PDF) 1 Page - Inchange Semiconductor Company Limited

DPG20C200PB bảng dữ liệu(HTML) 1 Page - Inchange Semiconductor Company Limited

Số phần tương tự - DPG20C200PB

Mô tả tương tự - DPG20C200PB

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