Philips Semiconductors

Product specification

Silicon Diffused Power Transistor

BU4506AX

GENERAL DESCRIPTION

Enhanced performance, new generation, high-voltage, high-speed switching npn transistor in a plastic full-pack

envelope intended for use in horizontal deflection circuits of colour television receivers. Features exceptional

tolerance to base drive and collector current load variations resulting in a very low worst case dissipation.

QUICK REFERENCE DATA

SYMBOL

PARAMETER

CONDITIONS

TYP.

MAX.

UNIT

V

CESM

Collector-emitter voltage peak value

V

-

1500

V

V

CEO

Collector-emitter voltage (open base)

-

800

V

I

C

Collector current (DC)

-

5

A

I

CM

Collector current peak value

-

8

A

P

tot

Total power dissipation

T

-

45

W

V

CEsat

Collector-emitter saturation voltage

I

-

3.0

V

I

Csat

Collector saturation current

f = 16 kHz

3.0

-

A

t

f

Fall time

I

300

450

ns

PINNING - SOT399

PIN CONFIGURATION

SYMBOL

PIN

DESCRIPTION

1

base

2

collector

3

emitter

case isolated

LIMITING VALUES

Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

V

CESM

Collector-emitter voltage peak value

V

-

1500

V

V

CEO

Collector-emitter voltage (open base)

-

800

V

I

C

Collector current (DC)

-

5

A

I

CM

Collector current peak value

-

8

A

I

B

Base current (DC)

-

3

A

I

BM

Base current peak value

-

5

A

-I

BM

Reverse base current peak value

1

-4

A

P

tot

Total power dissipation

T

25 ˚C

-

45

W

T

stg

Storage temperature

-65

150

˚C

T

j

Junction temperature

-

150

˚C

THERMAL RESISTANCES

SYMBOL

PARAMETER

CONDITIONS

TYP.

MAX.

UNIT

R

th j-hs

Junction to heatsink

with heatsink compound

-

2.8

K/W

R

th j-a

Junction to ambient

in free air

32

-

K/W

case

12 3

b

c

e

1 Turn-off current.

July 1999

1

Rev 1.000