Nexperia

MMBZ33VCL

Double ESD protection diode for transient overvoltage suppression

9. Thermal characteristics

Table 6. Thermal characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

[1]

-

-

350

K/W

Rth(j-a)

thermal resistance from

junction to ambient

[2]

-

-

280

K/W

Rth(j-sp)

thermal resistance from

junction to solder point

[3]

-

-

60

K/W

[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.

[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm2.

[3] Soldering point at pin 3.

10. Characteristics

Table 7. Characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

VF

forward voltage

IF = 10 mA; Tamb = 25 °C

-

-

0.9

V

VRWM

reverse standoff

voltage

Tamb = 25 °C

-

-

26

V

VBR

breakdown voltage

IR = 1 mA; Tamb = 25 °C

31.35 33

34.65 V

IRM

reverse leakage current VRWM = 26 V; Tamb = 25 °C

-

0.1

5

nA

Cd

diode capacitance

f = 1 MHz; VR = 0 V; Tamb = 25 °C

-

45

55

pF

VCL

clamping voltage

IPPM = 0.87 A; tp = 10/1000 µs;

Tamb = 25 °C

[1] [2] -

-

46

V

SZ

temperature coefficient IZ = 1 mA

-

29.4

-

mV/K

[1] In accordance with IEC 61643-321 (10/1000 µs current waveform).

[2] Measured from pin 1 or 2 to pin 3.

Tj (°C)

0

200

150

50

100

006aab321

0.4

0.8

1.2

PPPM

0

PPPM(25°C)

Fig. 3. Relative variation of rated peak pulse power

as a function of junction temperature; typical

values

006aab324

- VCL - VBR - VRWM

- IRM

- IR

- IPP

V

I

P-N

-

+

- IPPM

Fig. 4. V-I characteristics for a unidirectional ESD

protection diode

MMBZ33VCL

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©

Nexperia B.V. 2023. All rights reserved

Product data sheet

17 August 2023

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