2001 May 18

3

Philips Semiconductors

Product specification

N-channel enhancement mode

vertical D-MOS transistor

BSP89

THERMAL CHARACTERISTICS

Note

1. Transistor mounted on an epoxy printed circuit board, 40 x 40 x 1.5 mm, mounting pad for the drain tab minimum

6cm2.

CHARACTERISTICS

Tj =25 °C unless otherwise specified.

SYMBOL

PARAMETER

VALUE

UNIT

Rth j-a

thermal resistance from junction to ambient; note 1

83.3

K/W

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

V(BR)DSS

drain-source breakdown voltage

ID =10 µA; VGS = 0

240

−−

V

IDSS

drain-source leakage current

VDS = 60 V; VGS =0

−−

200

nA

IGSS

gate-source leakage current

VGS = ±20 V; VDS =0

−−

100

nA

VGSth

gate-source threshold voltage

ID = 1 mA; VGS =VDS

0.8

−

2V

RDSon

drain-source on-state resistance

ID = 340 mA; VGS =10V

−

2.8

5

Ω

ID = 340 mA; VGS = 4.5 V

−−

7.5

Ω

 Y

fs 

transfer admittance

ID = 340 mA; VDS = 25 V

140

600

−

mS

Ciss

input capacitance

VDS = 25 V; VGS = 0; f = 1 MHz

−

100

120

pF

Coss

output capacitance

VDS = 25 V; VGS = 0; f = 1 MHz

−

20

30

pF

Crss

reverse transfer capacitance

VDS = 25 V; VGS = 0; f = 1 MHz

−

10

15

pF

Switching times (see Figs 3 and 4)

ton

turn-on time

ID = 250 mA; VDD =50V;

VGS = 0 to 10 V

−

610

ns

toff

turn-off time

ID = 250 mA; VDD =50V;

VGS = 0 to 10 V

−

47

60

ns