MTP23P06V

http://onsemi.com

2

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Drain–Source Breakdown Voltage

(VGS = 0 Vdc, ID = 0.25 mAdc)

Temperature Coefficient (Positive)

V(BR)DSS

60

–

–

60.5

–

–

Vdc

mV/

°C

Zero Gate Voltage Drain Current

(VDS = 60 Vdc, VGS = 0 Vdc)

(VDS = 60 Vdc, VGS = 0 Vdc, TJ = 150°C)

IDSS

–

–

–

–

10

100

µAdc

Gate–Body Leakage Current (VGS = ± 15 Vdc, VDS = 0 Vdc)

IGSS

–

–

100

nAdc

ON CHARACTERISTICS (Note 1.)

Gate Threshold Voltage

(VDS = VGS, ID = 250 µAdc)

Threshold Temperature Coefficient (Negative)

VGS(th)

2.0

–

2.8

5.3

4.0

–

Vdc

mV/

°C

Static Drain–Source On–Resistance (VGS = 10 Vdc, ID = 11.5 Adc)

RDS(on)

–

0.093

0.12

Ohm

Drain–Source On–Voltage

(VGS = 10 Vdc, ID = 23 Adc)

(VGS = 10 Vdc, ID = 11.5 Adc, TJ = 150°C)

VDS(on)

–

–

–

–

3.3

3.2

Vdc

Forward Transconductance

(VDS = 10.9 Vdc, ID = 11.5 Adc)

gFS

5.0

11.5

–

Mhos

DYNAMIC CHARACTERISTICS

Input Capacitance

(V

25 Vd

V

0 Vd

Ciss

–

1160

1620

pF

Output Capacitance

(VDS = 25 Vdc, VGS = 0 Vdc,

f = 1.0 MHz)

Coss

–

380

530

Transfer Capacitance

f = 1.0 MHz)

Crss

–

105

210

SWITCHING CHARACTERISTICS (Note 2.)

Turn–On Delay Time

td(on)

–

13.8

30

ns

Rise Time

(VDD = 30 Vdc, ID = 23 Adc,

VGS =10Vdc

tr

–

98.3

200

Turn–Off Delay Time

VGS = 10 Vdc,

RG = 9.1 Ω)

td(off)

–

41

80

Fall Time

RG 9.1 Ω)

tf

–

62

120

Gate Charge

(S

Fi

8)

QT

–

38

50

nC

(See Figure 8)

(VDS = 48 Vdc, ID = 23 Adc,

Q1

–

7.0

–

(VDS 48 Vdc, ID 23 Adc,

VGS = 10 Vdc)

Q2

–

18

–

Q3

–

14

–

SOURCE–DRAIN DIODE CHARACTERISTICS

Forward On–Voltage

(IS = 23 Adc, VGS = 0 Vdc)

(IS = 23 Adc, VGS = 0 Vdc, TJ = 150°C)

VSD

–

–

2.2

1.8

3.5

–

Vdc

Reverse Recovery Time

trr

–

142.2

–

ns

(IS 23 Adc VGS 0 Vdc

ta

–

100.5

–

(IS = 23 Adc, VGS = 0 Vdc,

dIS/dt = 100 A/µs)

tb

–

41.7

–

Reverse Recovery Stored

Charge

dIS/dt = 100 A/µs)

QRR

–

0.804

–

µC

INTERNAL PACKAGE INDUCTANCE

Internal Drain Inductance

(Measured from contact screw on tab to center of die)

(Measured from the drain lead 0.25

″ from package to center of die)

LD

–

3.5

4.5

–

nH

Internal Source Inductance

(Measured from the source lead 0.25

″ from package to source bond pad)

LS

–

7.5

–

nH

1. Pulse Test: Pulse Width

≤ 300 µs, Duty Cycle ≤ 2%.

2. Switching characteristics are independent of operating junction temperature.