UTT75N75M

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

3 of 9

www.unisonic.com.tw

QW-R209-154.D



ABSOLUTE MAXIMUM RATINGS (TC=25°С, unless otherwise specified)

PARAMETER

SYMBOL

RATINGS

UNIT

Drain-Source Voltage

VDSS

75

V

Gate-Source Voltage

VGSS

±20

V

Continuous Drain Current

Continuous

ID

75

A

Pulsed Drain Current

Pulsed (Note 2)

IDM

150

A

Avalanche energy

Single Pulsed (Note 3)

EAS

163

mJ

Peak Diode Recovery dv/dt (Note 4)

dv/dt

10.5

V/nS

Power Dissipation

TO-220/TO-263

PD

180

W

TO-220F

45

W

TO-251/TO-252

64

W

Junction Temperature

TJ

+150

°C

Storage Temperature Range

TSTG

-55 ~ +150

°C

Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

2. Repetitive Rating: Pulse width limited by maximum junction temperature.

3. L = 0.1mH, IAS = 57A, VDD = 25V, RG = 25Ω, Starting TJ = 25°C

4. ISD≤30A, di/dt≤200A/µs, VDD≤BVDSS, TJ≤TJMAX, TJ = 25°C.



THERMAL DATA

PARAMETER

SYMBOL

RATINGS

UNIT

Junction to Ambient

TO-220/TO-220F

TO-263

θJA

62.5

°C/W

TO-251/TO-252

110

°C/W

Junction to Case

TO-220/TO-263

θJC

0.69

°C/W

TO-220F

2.77

°C/W

TO-251/TO-252

1.95

°C/W